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Datasheet D126CT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | D126CT | Fixed Inductors Fixed Inductors for Surface Mounting
D126CT
Inductance Range: 1.3~47µH
DIMENSIONS
Recommended patterns
5.0
(Unit: mm)
8.0 13.5
(Unit: mm)
FEATURES
12.8mm Max. square and 6.7mm Max. height. • Magnetically shielded construction and low DC resistance. • Suitable for large current. • Idea |  TOKO | inductor |
D12 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | D12000W | Standard Recovery Diode SEMICONDUCTOR
RRooHHSS
SEMICONDUCTOR
Fig.1 Maximuam forward voltage drop characteristics
D12000W Series RRooHHSS
Fig.2 Surge forward current vs pulse length
Fig.3 Forward power loss vs. Average forward current sine waveform
Fig.4 Forward power loss vs. Average forward current,square waveform
F  nELL diode | | |
| 2 | D1201 | METAL GATE RF SILICON FET TetraFET
D1201UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW  Seme LAB gate | | |
| 3 | D1201UK | METAL GATE RF SILICON FET TetraFET
D1201UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Seme LAB gate | | |
| 4 | D1202 | METAL GATE RF SILICON FET TetraFET
D1202UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Seme LAB gate | | |
| 5 | D1202UK | METAL GATE RF SILICON FET TetraFET
D1202UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Seme LAB gate | | |
| 6 | D1203UK | METAL GATE RF SILICON FET TetraFET
D1203UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2
D E
4 M
3
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN GATE
DM
PIN 1 PIN Seme LAB gate | | |
| 7 | D1204 | METAL GATE RF SILICON FET TetraFET
D1204UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C D (2 pls) E
B
1
2
3
A
G
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss
5
4
H I
F
M
K
J
Seme LAB gate | |
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