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Datasheet D1006 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | D1006 | NPN Transistor - 2SD1006 DATA SHEET
SILICON TRANSISTOR
2SD1006, 1007
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all products and/or types are available in every country |
 Renesas |
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| 1 | D1006UK | METAL GATE RF SILICON FET TetraFET
D1006UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B C A
E
1
2
3
F
G
6
J
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
D H M
Q
N
K
O
P
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crs |
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