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D10 даташит ( Datasheet PDF )


D10 Datasheet PDF ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
164 D10   Memory Micromodules General Information for D1/ D2 and C Packaging

D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging s Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: – Support for the chip – Electrical contacts – Suitable embedding interface for gluing the module to the plastic package potting side contact side s D15 s Physical dimensions and contact positions compliant to the ISO 7816 standard Micromodules delivered as a continuous Super 35 mm tape.
STMicroelectronics
STMicroelectronics
D10 pdf Даташит
163 D1000   2SD1000

Renesas
Renesas
D1000 pdf Даташит
162 D1001   2SD1001

Renesas
Renesas
D1001 pdf Даташит
161 D1001UK   GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED

TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D 4 M 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 DA PIN 1 PIN 3 SOURCE SOURCE DIM A B C D E F G H I J K M mm 24.76 18.42 45° 6.35 3.17 5.71 9.52 6.60 0.13 4.32 2.54 20.32 PIN 2 PIN 4 Tol.
Seme LAB
Seme LAB
D1001UK pdf Даташит
160 D1002UK   METAL GATE RF SILICON FET

MECHANICAL DATA A B C 1 4 M 2 3 F D E G HK PIN 1 PIN 3 SOURCE SOURCE DA PIN 2 PIN 4 IJ DRAIN GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.125 DIA 0.225 0.375 0.260 0.005 0.170 0.100 0.800 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 TetraFET D1002UK METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W –
Seme LAB
Seme LAB
D1002UK pdf Даташит
159 D1003UK   METAL GATE RF SILICON FET

TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DM PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 DRAIN GATE DIM A B C D E F G H I J K M mm 24.76 18.42 45° 6.35 3.17 Dia. 5.71 12.7 Dia. 6.60 0.13 4.32 3.17 26.16 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 R
Seme LAB
Seme LAB
D1003UK pdf Даташит
158 D1004   METAL GATE RF SILICON FET

TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I F M K J N • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DT PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN DIM A B C D E F G H I J K M N mm 6.35 DIA 3.17 DIA 18.41 5.46 5.21 7.62 21.59 3.94 12.70 0.13 24.76 2.59 4.06 Tol
Seme LAB
Seme LAB
D1004 pdf Даташит
157 D10040180GT   GaAs Power Doubler

Product Specification D10040180GT GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable under all terminations D10040180GT APPLICATION • 40 to 1000 MHz CATV amplifier systems DESCRIPTION • Hybrid Power Doubler amplifier module employing GaAs die GaAs Power Doubler Hybrid 40 – 1000MHz 19.0dB min. Gain @
PDI
PDI
D10040180GT pdf Даташит


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