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D10 даташит электронных компонентов


D10 Datasheet ( Даташиты )

Номер Номер в каталоге Описание Производители PDF
153 D10  D10 Даташит - STMicroelectronics Memory Micromodules General Information for D1/ D2 and C Packaging

D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging s Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: – Support for the chip – Electrical contacts – Suitable embedding interface for gluing the module to the plastic package potting side contact side s D15 s Physical dimensions and contact positions compliant to the ISO 7816 standard Micromodules delivered as a cont
STMicroelectronics
STMicroelectronics
PDF
152 D1000  D1000 Даташит - Renesas 2SD1000

Renesas
Renesas
PDF
151 D1001  D1001 Даташит - Renesas 2SD1001

Renesas
Renesas
PDF
150 D1001UK  D1001UK Даташит - Seme LAB GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED

TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D 4 M 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 DA PIN 1 PIN 3 SOURCE SOURCE DIM A B C D E F G H I J K M mm 24.76 18.42 45° 6.35 3.17 5.71 9.52 6.60 0.13 4.32 2.5
Seme LAB
Seme LAB
PDF
149 D1002UK  D1002UK Даташит - Seme LAB METAL GATE RF SILICON FET

MECHANICAL DATA A B C 1 4 M 2 3 F D E G HK PIN 1 PIN 3 SOURCE SOURCE DA PIN 2 PIN 4 IJ DRAIN GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.125 DIA 0.225 0.375 0.260 0.005 0.170 0.100 0.800 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 TetraFET D1002UK METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SIL
Seme LAB
Seme LAB
PDF
148 D1003UK  D1003UK Даташит - Seme LAB METAL GATE RF SILICON FET

TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DM PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 DRAIN GATE DIM A B C D E F G H I J K M mm 24.76 18.42 45° 6.35 3.17 Dia. 5.71 12.7 Dia. 6.60 0.13 4.32 3.17 26.16 Tol. 0.13 0.13
Seme LAB
Seme LAB
PDF
147 D1004  D1004 Даташит - Seme LAB METAL GATE RF SILICON FET

TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I F M K J N • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DT PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN DIM A B C D E F G H I J K M N mm 6.35 DIA 3.17 DIA 18.41 5.46 5.21 7.62 21.59 3.94 12.70
Seme LAB
Seme LAB
PDF
146 D10040180GT  D10040180GT Даташит - PDI GaAs Power Doubler

Product Specification D10040180GT GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable under all terminations D10040180GT APPLICATION • 40 to 1000 MHz CATV amplifier systems DESCRIPTION • Hybrid Power Doubler amplifier module employing GaAs die GaAs Power Doubler Hybrid 40 – 1
PDI
PDI
PDF
145 D10040180GTH  D10040180GTH Даташит - PDI GaAs Power Doubler

Product Specification D10040180GTH GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 440mA max. @ 24VDC FEATURES • • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable under all terminations High output capability D10040180GTH APPLICATION • 40 to 1000 MHz CATV amplifier systems GaAs Power Doubler Hybrid High Output Capability 40 – 1000MHz 19.0dB min. Gai
PDI
PDI
PDF
144 D10040200GT  D10040200GT Даташит - PDI Product Specification

Product Specification D10040200GT GaAs Power Doubler, 40 – 1000MHz, 20.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable under all terminations D10040200GT APPLICATION 40 to 1000 MHz CATV amplifier systems DESCRIPTION Hybrid Power Doubler amplifier module employing GaAs die GaAs Power Doubler Hybrid 40
PDI
PDI
PDF



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