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Datasheet CY7C199 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | CY7C199 | 32K x 8 Static RAM CY7C199
32K x 8 Static RAM
Features
• High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW (max, 12 ns “L” version) • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only) • Easy memory expansion w |
 Cypress Semiconductor |
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| 4 | CY7C1992BV18 | 1.8V Synchronous Pipelined SRAM CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
Features
■ 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 300 MHz clock for high bandwidth ■ 2-word burst for reducing address bus frequency ■ Double Data Rate (DDR) interfaces
(d |
Cypress Semiconductor |
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| 3 | CY7C199C | 32K x 8 Static RAM CY7C199C
32K x 8 Static RAM
Features
• Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns • Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) • CMOS for optimum speed/power • TTL–compatible Inputs and Outputs • Available in 28 DIP, 28 SOJ, and 28 TSOP I. • 2.0V Data Retention • Low CMOS |
Cypress Semiconductor |
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| 2 | CY7C199D | 256K (32K x 8) Static RAM CY7C199D
256K (32K x 8) Static RAM
Features
■
Functional Description
The CY7C199D is a high performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE) and tri-state drivers. This device ha |
Cypress Semiconductor |
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