даташит CS8N80A8H IC Даташиты PDF

Silicon N-Channel Power MOSFET CS8N80 A8H ○R General Description： CS8N80 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤1.25�

Silicon N-Channel Power MOSFET CS8N80F A9H ○R General Description： CS8N80F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Silicon N-Channel Power MOSFET CS8N80 A8D ○R General Description： CS8N80 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Th

Silicon N-Channel Power MOSFET CS8N80F A9D ○R General Description： CS8N80F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.