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На странице результатов поиска CS8563S Даташиты отображается список соответствующих спецификаций на основе введенного ключевого слова или фразы. Предоставляет подробные спецификации и возможности сравнения, чтобы пользователи могли легко просматривать и выбирать продукты от широкого круга ведущих производителей. |
CS8563S даташит PDF |
Номер в каталоге | Описание | Производители | ||
1 | CS8563S | CS8563S |
![]() ETC |
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Это результат поиска, начинающийся с "CS8" |
Номер в каталоге | Описание | Производители | |
CS8N80A8H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS8N80 A8H
○R
General Description:
CS8N80 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. Th |
![]() Huajing Microelectronics |
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CS82C86H-5 | CMOS Octal Bus Transceiver 82C86H
March 1997
CMOS Octal Bus Transceiver
Description
The Intersil 82C86H is a high performance CMOS Octal Transceiver manufactured using a self-aligned silicon gate CMOS process (Scaled SAJI IV). The 82C86H provides a full eight-bit bi-directional bus interface in a 20 lead |
![]() Intersil Corporation |
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CS85-B2GA331KYNS | Disk Ceramic Capacitors (1/2)
Disk Ceramic Capacitors with Lead Safety Standard Approved CS Series
BASIC INSULATION TYPE Temperature range: –25 to +125°C CLASS 2 HIGH DIELECTRIC FEATURES • Smaller than conventional capacitors. • Flame-resistant reinforced outer insulation prevents fires, electri |
![]() TDK |
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CS800 | Phase Control Thyristor Phase Control Thyristor
CS 800 ITRMS = 1600 A
ITAVM = 800 A VRRM = 1200 -1600 V
VRSM VDSM V 1200 1400 1600
V RRM V DRM V
Type
1 2 2 4
3
3 4
1200 1400 1600
CS 800 - 12io1 CS 800 - 14io1 CS 800 - 16io1
1
Symbol ITRMS ITAVM I TSM
Test Conditions TC = 80 |
![]() IXYS Corporation |
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CS8481 | Micropower Low Dropout Regulator
CS8481 3.3 V/250 mA, 5.0 V/100 mA Micropower Low Dropout Regulator with ENABLE
The CS8481 is a precision, dual Micropower linear voltage regulator. The switched 3.3 V primary output (VOUT1) supplies up to 250 mA while the secondary 5.0 V (VOUT2) is capable of |
![]() ON Semiconductor |
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CS8N80A8D | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS8N80 A8D
○R
General Description:
CS8N80 A8D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. Th |
![]() Huajing Microelectronics |
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CS8N70FA9H2-G | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS8N70F A9H2-G
○R
General Description:
CS8N70F A9H2-G , the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche e |
![]() Huajing Microelectronics |
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CS8240 | High Side (PNP) Driver
CS8240 500 mA High Side (PNP) Driver with On-Chip Flyback Diode
The CS8240 is a fast, PNP high side driver capable of delivering up to 500 mA into a resistive or inductive load in harsh automotive or industrial environments. An internal flyback diode clamp is |
![]() ON Semiconductor |
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CS8129 | Low Dropout Linear Regulator
CS8129 5.0 V, 750 mA Low Dropout Linear Regulator with Lower RESET Threshold
The CS8129 is a precision 5.0 V linear regulator capable of sourcing 750 mA. The RESET threshold voltage has been lowered to 4.2 V so that the regulator can be used with 4.0 V microp |
![]() ON Semiconductor |
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CS830A8RD | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS830 A8RD
○R
General Description:
CS830 A8RD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. Th |
![]() Huajing Microelectronics |
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Номер в каталоге | Описание | Производители | |
2N3904 | Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
![]() Unisonic Technologies |
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NE555 | Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
![]() ST Microelectronics |
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