DataSheet26.com

CPH6412 даташит электронных компонентов


CPH6412 Datasheet ( Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 CPH6412  CPH6412 Даташит - Sanyo Semicon Device Ultrahigh-Speed Switching Applications

Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6412] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te
Sanyo Semicon Device
Sanyo Semicon Device
PDF


CPH641 даташита ( переписка )

Номер в каталоге Описание Производители PDF
CPH6411  CPH6411 Даташит - Sanyo N-Channel Silicon MOSFET

Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6412] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te
Sanyo
Sanyo
PDF
CPH6413  CPH6413 Даташит - Sanyo Semicon Device CPH6413

Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6412] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te
Sanyo Semicon Device
Sanyo Semicon Device
PDF
CPH6411  CPH6411 Даташит - ETC N CHANNEL MOS SILICON TRANSISTOR

Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6412] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te
ETC
ETC
PDF
CPH6415  CPH6415 Даташит - Sanyo Semicon Device General-Purpose Switching Device Applications

Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6412] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te
Sanyo Semicon Device
Sanyo Semicon Device
PDF
CPH6412  CPH6412 Даташит - Sanyo Semicon Device Ultrahigh-Speed Switching Applications

Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6412] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te
Sanyo Semicon Device
Sanyo Semicon Device
PDF
CPH6411  CPH6411 Даташит - ETC N CHANNEL MOS SILICON TRANSISTOR

Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6412] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te
ETC
ETC
PDF



Ссылка Поделиться :
[1] 

Последние обновления
[ 10N80 ]  [ 16F120 ]  [ 182T2B ]  [ 182T2C ]  [ 183T2B ]  [ 183T2C ]  [ 184T2B ]  [ 184T2C ]  [ 185T2B ]  [ 185T2C ]  [ 1EBN1001AE ]  [ 1N3941B ]  [ 1N3941G ]  [ 1N3941G-M ]  [ 1N3942 ]  [ 1N3942-M ]  [ 1N3942B ]  [ 1N3942G ]  [ 1N3942G-M ]  [ 1N3997A ]  [ 1N3997A-SEL ]  [ 1N3997RA ]  [ 1N5617 ]  [ 1N5811-M ]  [ 2N2222A-M

Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z




DataSheet26.com    |   2017    |   Контакты    |   English