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CPH6412 даташит электронных компонентов


CPH6412 Datasheet ( Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 CPH6412  CPH6412 Даташит - Sanyo Semicon Device Ultrahigh-Speed Switching Applications

Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6412] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te
Sanyo Semicon Device
Sanyo Semicon Device
PDF


CPH641 даташита ( переписка )

Номер в каталоге Описание Производители PDF
CPH6411  CPH6411 Даташит - Sanyo N-Channel Silicon MOSFET

Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6412] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te
Sanyo
Sanyo
PDF
CPH6413  CPH6413 Даташит - Sanyo Semicon Device CPH6413

Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6412] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te
Sanyo Semicon Device
Sanyo Semicon Device
PDF
CPH6411  CPH6411 Даташит - ETC N CHANNEL MOS SILICON TRANSISTOR

Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6412] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te
ETC
ETC
PDF
CPH6415  CPH6415 Даташит - Sanyo Semicon Device General-Purpose Switching Device Applications

Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6412] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te
Sanyo Semicon Device
Sanyo Semicon Device
PDF
CPH6412  CPH6412 Даташит - Sanyo Semicon Device Ultrahigh-Speed Switching Applications

Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6412] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te
Sanyo Semicon Device
Sanyo Semicon Device
PDF
CPH6411  CPH6411 Даташит - ETC N CHANNEL MOS SILICON TRANSISTOR

Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6412] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te
ETC
ETC
PDF



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