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даташит C6073 IC Даташиты PDF |
Номер в каталоге | Описание | Производители | ||
20 | C6000 | 2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6000
High Speed Switching Applications DC-DC Converter Applications
2SC6000
Unit: mm
• High DC current gain: hFE = 250 to 400 (IC = 2.5 A) • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) • High speed switching: tf = 13 ns (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Colle |
![]() Toshiba Semiconductor |
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19 | C6010 | 2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6010
High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
2SC6010
Unit: mm
• High speed switching: tf = 0.24μs (max) (IC = 0.3A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C
VCBO VCEX VCEO VEBO
IC ICP I |
![]() Toshiba |
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18 | C6011 | 2SC6011 2SC6011 Audio Amplification Transistor
Features and Benefits
▪ Small package (TO-3P) ▪ High power handling capacity, 160 W ▪ Improved sound output by reduced on-chip impedance ▪ For professional audio (PA) applications, VCEO = 200 V
versions available ▪ Complementary to 2SA2151 ▪ Recommended output driver: 2SC4832
Package: 3 Lead TO-3P
Description
By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage |
![]() Allegro |
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17 | C6012 | 2SC6012 Power Transistors
2SC6012
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
■ Features
• High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe oeration area
26.5±0.5
(23.4)
(2.0)
5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5
5.5±0.3
5˚ 5˚
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-em |
![]() Panasonic Semiconductor |
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16 | C6017 | 2SC6017
Ordering number : ENN8275
2SA2169 / 2SC6017
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2169 / 2SC6017
Applications
•
High-Current Switching Applications
Relay drivers, lamp drivers, motor drivers.
Features
• • • •
Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
Specifications ( ) : 2SA2169
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base |
![]() Sanyo Semicon Device |
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15 | C6019 | 2SC6019
Ordering number : ENN8342
2SC6019
2SC6019
Applications
•
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
• • • • • •
Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to |
![]() Sanyo Semicon Device |
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14 | C6040 | 2SC6040
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6040
High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
2SC6040
Unit: mm
• High-speed switching: tf = 0.2 µs (max) (IC = 0.3 A) • High breakdown voltage: VCES = 800 V, VCEO = 410 V
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector |
![]() Toshiba Semiconductor |
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13 | C6042 | 2SC6042 2SC6042
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6042
High-Speed, High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
• • High-speed switching: tf = 0.2 μs (max) (IC = 0.3A) High breakdown voltage: VCES = 800 V, VCEO = 375 V Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature r |
![]() Toshiba Semiconductor |
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Номер в каталоге | Описание | Производители | |
CD4515BC | The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. |
![]() Fairchild Semiconductor |
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HV101WU1-1E6 | HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. |
![]() HYDIS |
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На первой странице data sheets приводятся: |
DataSheet26.com | 2020 | Контакты |