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C5586 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
26 C5502   2SC5502

Ordering number:ENN6279 NPN Epitaxial Planar Silicon Transistor 2SC5502 High-Frequency Low-Noise Amplifier Applications Features · Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ. Package Dimensions unit:mm 2161 [2SC5502] 0.425 0.65 0.65 0.3 43 0.15 0 to 0.1 0.2 1.25 2.1 12 0.6 0.65 0.5 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Colle
Sanyo
Sanyo
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25 C5505   2SC5505

Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification ■ Features • High-speed switching • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Ta = 25°C Storage temperature VCBO VCEO V
Panasonic
Panasonic
pdf
24 C5508   2SC5508

PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) ORDERING INFORMATION Part Number 2SC5508 2SC5508-T2 Quanti
NEC
NEC
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23 C5511    2SC5511

2SC5511 Transistors For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A) 2SC5511 zExternal dimensions (Unit : mm) TO-220FN 10.0 zStructure NPN Silicon Epitaxial Planar Transistor 4.5 φ3.2 2.8 zFeatures 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO=160V(Min.), at IC=1mA) 3) High fT. (Typ. 150MHz, at VCE=10V, IE= −0.2A, f=100MHz) 4) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 14.0 0.8 2.54 (1) (2) (3)
Rohm
Rohm
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22 C5516    2SC5516

Power Transistors 2SC5516 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 30 20 8 70 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratin
Panasonic
Panasonic
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21 C551E    C-551E

C/A-551X, C/A-561X SINGLE DIGIT DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Electro-Optical Characteristics Length Vf(V)20mA Iv(ucd)10mA Fig.No. ɡp(nm) Typ. Max. Typ. C-551H C-551E C-551G C-551Y C-551SR C-561H C-561E C-561G C-561Y C-561SR A-551H A-551E A-551G A-551Y A-551SR A-561H A-561E A-561G A-561Y A-561SR GaP GaAsP/GaP GaP GaAsP/GaP GaAlAs GaP GaAsP/GaP GaP GaAsP/GaP GaAlAs Red Hi.effi Red Green Yellow Super Red Red Hi.effi Red Green Yellow Super
Para Light Electronics
Para Light Electronics
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20 C5521   2SC5521

New Horizontal Deflection Transistor Series for TV s Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safeoperation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced features contribute to higher performing, more reliable home-use TVs that cost less. s Features www.Datasheet26.com
Panasonic
Panasonic
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19 C5545   2SC5545

2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline Note: Marking is “ZS-”. MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter ADE-208-746 (Z) 1st. Edition Jan. 1999 2SC5545 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction t
Hitachi Semiconductor
Hitachi Semiconductor
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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
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