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C502 даташитФункция этой детали – «Pci Dual Port Sync Board Manual». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
C502 | Moxa |
PCI Dual Port Sync Board Manual C502C502-PCI DualDual-Port Sync Board
Moxa Technologies Co., Ltd. Tel: +866-2-8919-1230 Fax: +886-2-8919-1231 www.moxa.com [email protected]
Free Datasheet http://
Free Datasheet http://
C502 DualDual-Port Sync Board User’s User’s Manual
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C5020 | Won-Top Electronics |
50A AVALANCHE AUTOMOTIVE CELL DIODE ®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX
C5020, C5024, C5036
50A AVALANCHE AUTOMOTIVE CELL DIODE
Pb
D
Anode +
C E
Mechanical Data
B
C50
Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated Polarity: Indicated by Large Disc On Cathode
Dim Min Max A — 7.55 B — 6.55
Side, Add “R” Suffix to Indicate Reverse Polarity,
C 0.75 —
i.e. C5020R Mounting Position: An |
|
C5021CT-036 | NEC |
UPC5021 |
|
C5022 | Hitachi Semiconductor |
NPN Transistor - 2SC5022 2SC5022
Silicon NPN Triple Diffused
Application
High voltage amplifier
Features
• High breakdown voltage V (BR)CEO = 1500 V Min
Outline
TO-220FM
www.DataSheet.co.kr
12 3
1. Base 2. Collector 3. Emitter
Datasheet pdf - http://www.DataSheet4U.net/
2SC5022
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C |
|
C5023 | Hitachi |
NPN Transistor - 2SC5023
2SC5023
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics fT = 1000 MHz typ
• High breakdown voltage and low output capacitance VCEO = 100 V, Cob = 4.5 pF typ
• Suitable for wide band video amplifier
TO–126FM
123
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
———————————————————————————————————————� |
|
C5023CS | NEC |
UPC5023 |
|
C5024 | Won-Top Electronics |
50A AVALANCHE AUTOMOTIVE CELL DIODE ®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX
C5020, C5024, C5036
50A AVALANCHE AUTOMOTIVE CELL DIODE
Pb
D
Anode +
C E
Mechanical Data
B
C50
Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated Polarity: Indicated by Large Disc On Cathode
Dim Min Max A — 7.55 B — 6.55
Side, Add “R” Suffix to Indicate Reverse Polarity,
C 0.75 —
i.e. C5020R Mounting Position: An |
|
C5024 | Hitachi Semiconductor |
Silicon NPN Epitaxial 2SC5024
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics fT = 300 MHz typ
• High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ
• Suitable for wide band video amplifier • Complimentary pair of 2SA1889
TO–126FM
123
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
———————————————————————————————————� |
[1]  [2]
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |