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C4452 даташитФункция этой детали – «NPN Transistor - 2sc4452». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
C4452 | Sanyo Semicon Device |
NPN Transistor - 2SC4452 Ordering number:EN2811
NPN Epitaxial Planar Silicon Transistor
2SC4452
High-Speed Switching Applications
Features
· Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity. · Very small-sized package permitting the 2SC4452applied sets to be made small and slim.
Package Dimensions
unit:mm 2059B
[2SC4452]
0.425
0.3 3 0~0.1 0.15
1.250
2.1
0.425
1 2 0.65 0.65 2.0
0.3 0.9
0.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to |
Это результат поиска, начинающийся с "4452", "C4" |
Номер в каталоге | Производители | Описание | |
1N4452 | New Jersey Semiconductor |
Diode Switching 75V 0.15A 2-Pin DO-35 |
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2SC4452 | Sanyo Semicon Device |
High-Speed Switching Applications Ordering number:EN2811
NPN Epitaxial Planar Silicon Transistor
2SC4452
High-Speed Switching Applications
Features
· Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity. · Very small-sized package permitting th |
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AK4452 | AKM |
115dB 768kHz 32-bit 2ch Premium DAC [AK4452]
= Preliminary =
AK4452
115dB 768kHz 32-bit 2ch Premium DAC
1. General Description The AK4452 is a 32-bit 2ch Premium DAC, which achieves industry’s best low distortion characteristics by a newly developed low distortion technology. It corresponds to a 768kHz PCM in |
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AO4452 | Freescale |
100V N-Channel MOSFET AO4452
100V N-Channel MOSFET
General Description
The AO4452 is fabricated with SDMOS TM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PW |
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AO4452 | Alpha & Omega Semiconductors |
100V N-Channel MOSFET AO4452
100V N-Channel MOSFET SDMOS TM
General Description
The AO4452 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited |
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EL4452C | Elantec Semiconductor |
Wideband Variable-Gain Amplifier with Gain of 10 EL4452C
EL4452C
Wideband Variable-Gain Amplifier with Gain of 10
Features
Complete variable-gain amplifier complete with output amplifier Compensated for Gain t 10 50 MHz signal bandwidth 50 MHz gain-control bandwidth Low 29 nV SHz input noise Operates on g 5V to g |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |