|
C3355 даташитФункция этой детали – «NPN Transistor - 2sc3355». |
Показать результаты поиска |
| Номер в каталоге | Производители | Описание | |
| C3355 |  NEC |
NPN Transistor - 2SC3355
DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC3355
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.
PACKAGE DIMENSIONS in millimeters (inches)
5.2 MAX. (0.204 MAX.)
FEATURES
• Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 |
 |
Это результат поиска, начинающийся с "3355", "C3" |
| Номер в каталоге | Производители | Описание | |
| 2SC3355 | NEC |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC3355
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good c |
 |
| 2SC3355 |  American Microsemiconductor |
Diode ( Rectifier ) |
|
| 2SC3355 |  Unisonic Technologies |
NPN Silicon Transistor UNISONIC TECHNOLOGIES CO., LTD
2SC3355
NPN SILICON EPITAXIAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER
FEATURES
* Low Noise and High Gain * High Power Gain
1 TO-92
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SC3355L-T92-B
2SC3355G-T92-B
2S |
|
| 2SC3355 |  Inchange Semiconductor |
Silicon NPN RF Transistor INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3355
DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ·Hig |
|
| 2SC3355 |  Renesas |
NPN EPITAXIAL SILICON RF TRANSISTOR To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company na |
|
| 2SK3355 | NEC |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3355
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
5
DESCRIPTION
The 2SK3355 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3355 2SK3355-S 2SK3355-ZJ 2 |
|
[1]
Последние обновления
| Номер в каталоге | Производители | Описание | |
| 2N3904 |  Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
| NE555 |  ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
|
| DataSheet26.com | 2020 | Контакты |