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C1251 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
7 C1251   Bipolar Analog Integrated Circuit

Bipolar Analog Integrated Circuit μ PC1251, 358 μ PC1251, 358 C 50 μ A TYP. V GND V GND μ PC1251 μ PC358 DC μ PC451, 324 2 mV TYP. 5 nA TYP. 100000 TYP. DIP, SOP μ PC1251C μ PC1251C (5) μ PC1251G2 μ PC1251G2 (5) μ PC358C μ PC358C (5) μ PC358G2 μ PC358G2 (5) μ PC1251 DC DC DC DC 8 8 8 8 BT DIP 7.62 mm 300 SOP 5.72 mm 225 DIP 7.62 mm 300 SOP 5.72 mm 225 125°C G10526JJBV0DS00 December 2007 NS 11 " " PDF 1993 μ PC1251, 358 1/2 6 μA 6 μA Q2 I I Q1 Q3 Q4 CC 100 μA V Q5 Q6 Q7 RSC O
Renesas
Renesas
pdf
6 C1251    UPC1251

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μ PC1251GR-9LG, μ PC1251MP-KAA, μ PC358GR-9LG SINGLE POWER SUPPLY DUAL OPERATIONAL AMPLIFIERS DESCRIPTION The μ PC1251GR-9LG, μ PC1251MP-KAA, μ PC358GR-9LG are dual operational amplifiers which are designed to operate for a single power supply. It includes features of low-voltage operation, a common-mode input voltage that range from V− (GND) level, an output from a V− (GND) level that is determined by the output stage of class C pushpull
NEC
NEC
pdf
5 C1251   Low Power Dual Operational Amplifier

ETC
ETC
pdf
4 C1251    2SC1251

2SC1251 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz. FEATURES INCLUDE: • Direct Replacement for NE74020 • High Gain - 10 dB min. @ 1.0 GHz • Gold Metalization PACKAGE STYLE .204 4L STUD MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC O O 300 mA 45 V 5.3W @ TC = 25 C -65 C to +200 C -65 C to +150 C 33 C/W O O O O 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO hF
ASI
ASI
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3 C1251C   Bipolar Analog Integrated Circuit

Bipolar Analog Integrated Circuit μ PC1251, 358 μ PC1251, 358 C 50 μ A TYP. V GND V GND μ PC1251 μ PC358 DC μ PC451, 324 2 mV TYP. 5 nA TYP. 100000 TYP. DIP, SOP μ PC1251C μ PC1251C (5) μ PC1251G2 μ PC1251G2 (5) μ PC358C μ PC358C (5) μ PC358G2 μ PC358G2 (5) μ PC1251 DC DC DC DC 8 8 8 8 BT DIP 7.62 mm 300 SOP 5.72 mm 225 DIP 7.62 mm 300 SOP 5.72 mm 225 125°C G10526JJBV0DS00 December 2007 NS 11 " " PDF 1993 μ PC1251, 358 1/2 6 μA 6 μA Q2 I I Q1 Q3 Q4 CC 100 μA V Q5 Q6 Q7 RSC O
Renesas
Renesas
pdf
2 C1251C   Low Power Dual Operational Amplifier

ETC
ETC
pdf
1 C1251D   Low Power Dual Operational Amplifier

ETC
ETC
pdf



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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
pdf

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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