C-5570H даташит

Функция этой детали – «2.0 Inch/ 5 X 7 Dot Matrix Display».

Показать результаты поиска

Номер в каталоге	Производители	Описание	PDF
C-5570H	Epson Company	2.0 INCH/ 5 X 7 DOT MATRIX DISPLAY C/A-5570X 2.0 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Optical Characteristics Vf(V)20mA Iv(ucd)10mA Typ. Max. Typ. Fig. No. C-5570H C-5570E C-5570G C-5570Y C-5570SR A-5570H A-5570E A-5570G A-5570Y A-5570SR GaP GaAsP/GaP GaP GaAsP/GaP GaAlAs Red Hi.effi Red Green Yellow Super Red 700 635 565 585 660 2.1 2.0 2.1 2.1 1.8 2.8 2.8 2.8 2.8 2.4 1000 3600 3400 3400 10000 D90 Fig.D90 1.All dimension are in millimeters (inches

Это результат поиска, начинающийся с "C-55", "C-55"

Номер в каталоге	Производители	Описание	PDF
BS616LV1623TC-55	ETC	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BSI FEATURES Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable DESCRIPTION BS616LV1623 • Vcc operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-gr
BS62LV1029DC-55	Brilliance Semiconductor	Very Low Power/Voltage CMOS SRAM 128K X 8 bit BSI FEATURES Very Low Power/Voltage CMOS SRAM 128K X 8 bit DESCRIPTION BS62LV1029 • Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 46mA (@55ns) operating current I- grade : 47mA (@55ns) operating current C-grade : 38mA (@70ns)
BS62LV1029JC-55	Brilliance Semiconductor	Very Low Power/Voltage CMOS SRAM 128K X 8 bit BSI FEATURES Very Low Power/Voltage CMOS SRAM 128K X 8 bit DESCRIPTION BS62LV1029 • Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 46mA (@55ns) operating current I- grade : 47mA (@55ns) operating current C-grade : 38mA (@70ns)
BS62LV1029PC-55	Brilliance Semiconductor	Very Low Power/Voltage CMOS SRAM 128K X 8 bit BSI FEATURES Very Low Power/Voltage CMOS SRAM 128K X 8 bit DESCRIPTION BS62LV1029 • Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 46mA (@55ns) operating current I- grade : 47mA (@55ns) operating current C-grade : 38mA (@70ns)
BS62LV1029SC-55	Brilliance Semiconductor	Very Low Power/Voltage CMOS SRAM 128K X 8 bit BSI FEATURES Very Low Power/Voltage CMOS SRAM 128K X 8 bit DESCRIPTION BS62LV1029 • Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 46mA (@55ns) operating current I- grade : 47mA (@55ns) operating current C-grade : 38mA (@70ns)
BS62LV1029STC-55	Brilliance Semiconductor	Very Low Power/Voltage CMOS SRAM 128K X 8 bit BSI FEATURES Very Low Power/Voltage CMOS SRAM 128K X 8 bit DESCRIPTION BS62LV1029 • Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 46mA (@55ns) operating current I- grade : 47mA (@55ns) operating current C-grade : 38mA (@70ns)

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Последние обновления

Номер в каталоге	Производители	Описание	PDF
2N3904	Unisonic Technologies	Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.
NE555	ST Microelectronics	Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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