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C-551Y даташитФункция этой детали – «Single Digit Display». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
C-551Y | ETC |
SINGLE DIGIT DISPLAY C/A-551X, C/A-561X SINGLE DIGIT DISPLAY
Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Electro-Optical Characteristics Length Vf(V)20mA Iv(ucd)10mA Fig.No. ɡp(nm) Typ. Max. Typ.
C-551H C-551E C-551G C-551Y C-551SR C-561H C-561E C-561G C-561Y C-561SR
A-551H A-551E A-551G A-551Y A-551SR A-561H A-561E A-561G A-561Y A-561SR
GaP GaAsP/GaP GaP GaAsP/GaP GaAlAs GaP GaAsP/GaP GaP GaAsP/GaP GaAlAs
Red Hi.effi Red Green Yellow Super Red Red Hi.effi Red Green Yellow Super Red
700 635 565 585 |
Это результат поиска, начинающийся с "C-55", "C-5" |
Номер в каталоге | Производители | Описание | |
BS616LV1623TC-55 | ETC |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
DESCRIPTION
BS616LV1623
• Vcc operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-gr |
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BS62LV1029DC-55 | Brilliance Semiconductor |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 128K X 8 bit
DESCRIPTION
BS62LV1029
• Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 46mA (@55ns) operating current I- grade : 47mA (@55ns) operating current C-grade : 38mA (@70ns) |
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BS62LV1029JC-55 | Brilliance Semiconductor |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 128K X 8 bit
DESCRIPTION
BS62LV1029
• Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 46mA (@55ns) operating current I- grade : 47mA (@55ns) operating current C-grade : 38mA (@70ns) |
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BS62LV1029PC-55 | Brilliance Semiconductor |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 128K X 8 bit
DESCRIPTION
BS62LV1029
• Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 46mA (@55ns) operating current I- grade : 47mA (@55ns) operating current C-grade : 38mA (@70ns) |
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BS62LV1029SC-55 | Brilliance Semiconductor |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 128K X 8 bit
DESCRIPTION
BS62LV1029
• Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 46mA (@55ns) operating current I- grade : 47mA (@55ns) operating current C-grade : 38mA (@70ns) |
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BS62LV1029STC-55 | Brilliance Semiconductor |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 128K X 8 bit
DESCRIPTION
BS62LV1029
• Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 46mA (@55ns) operating current I- grade : 47mA (@55ns) operating current C-grade : 38mA (@70ns) |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |