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BUZ73 даташит

Функция этой детали – «Sipmos Power Transistor».



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Номер в каталоге Производители Описание PDF
BUZ73 Siemens Semiconductor Group
Siemens Semiconductor Group
  SIPMOS Power Transistor

BUZ 73 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 73 VDS 200 V ID 7A RDS(on) 0.4 Ω Package TO-220 AB Ordering Code C67078-S1317-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 7 Unit A ID IDpuls 28 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 7 6.5 mJ ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3
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BUZ73 Infineon Technologies AG
Infineon Technologies AG
  SIPMOS Power Transistor

SIPMOS ® Power Transistor BUZ 73 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V ID 7A RDS(on) 0.4 Ω Package Ordering Code BUZ 73 TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 28 ˚C ID A 7 Pulsed drain current TC = 25 ˚C IDpuls 28 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.6
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BUZ73A Siemens Semiconductor Group
Siemens Semiconductor Group
  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 73 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 73 A VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package TO-220 AB Ordering Code C67078-S1317-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 5.5 Unit A ID IDpuls 22 TC = 37 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 7 6.5 mJ ID = 7 A, VDD = 50 V, RGS = 25
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BUZ73A Intersil Corporation
Intersil Corporation
  5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET

BUZ73A Semiconductor Data Sheet October 1998 File Number 2263.1 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET Features • 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds transistors requiring high spe
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BUZ73A Infineon Technologies AG
Infineon Technologies AG
  SIPMOS Power Transistor

SIPMOS ® Power Transistor BUZ 73A • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package Ordering Code BUZ 73 A TO-220 AB C67078-S1317-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 37 ˚C ID A 5.5 Pulsed drain current TC = 25 ˚C IDpuls 22 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 �
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BUZ73A Comset Semiconductors
Comset Semiconductors
  N-Channel Enhancement Mode Power MOS Transistors

SEMICONDUCTORS BUZ73A N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits and housed in a TO-220 envelope. ABSOLUTE MAXIMUM RATINGS Symbol VDS VSD IDS IDM VGS RDS(on
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BUZ73AL Siemens Semiconductor Group
Siemens Semiconductor Group
  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

BUZ 73 AL SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 73 AL Pin 2 D Pin 3 S VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package TO-220 AB Ordering Code C67078-S1328-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 5.5 Unit A ID IDpuls 22 TC = 37 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 7 6.5 mJ ID = 7 A, VDD =
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BUZ73AL Infineon Technologies AG
Infineon Technologies AG
  SIPMOS Power Transistor

SIPMOS ® Power Transistor BUZ 73AL • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 Pin 3 G Type D Ordering Code S VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package BUZ 73 AL TO-220 AB C67078-S1328-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 37 ˚C ID A 5.5 Pulsed drain current TC = 25 ˚C IDpuls 22 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 7 A, VDD = 50
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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