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BUZ73 даташитФункция этой детали – «Sipmos Power Transistor». |
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Номер в каталоге | Производители | Описание | |
BUZ73 | Siemens Semiconductor Group |
SIPMOS Power Transistor BUZ 73
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 73
VDS
200 V
ID
7A
RDS(on)
0.4 Ω
Package TO-220 AB
Ordering Code C67078-S1317-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 7 Unit A
ID IDpuls
28
TC = 28 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
7 6.5 mJ
ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3 |
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BUZ73 | Infineon Technologies AG |
SIPMOS Power Transistor SIPMOS ® Power Transistor
BUZ 73
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
200 V
ID
7A
RDS(on)
0.4 Ω
Package
Ordering Code
BUZ 73
TO-220 AB
C67078-S1317-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 28 ˚C
ID
A 7
Pulsed drain current
TC = 25 ˚C
IDpuls
28
IAR EAR EAS
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.6 |
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BUZ73A | Siemens Semiconductor Group |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 73 A
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 73 A
VDS
200 V
ID
5.5 A
RDS(on)
0.6 Ω
Package TO-220 AB
Ordering Code C67078-S1317-A3
Maximum Ratings Parameter Continuous drain current Symbol Values 5.5 Unit A
ID IDpuls
22
TC = 37 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
7 6.5 mJ
ID = 7 A, VDD = 50 V, RGS = 25 |
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BUZ73A | Intersil Corporation |
5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET BUZ73A
Semiconductor
Data Sheet
October 1998
File Number 2263.1
5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET
Features
• 5.8A, 200V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds transistors requiring high spe |
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BUZ73A | Infineon Technologies AG |
SIPMOS Power Transistor SIPMOS ® Power Transistor
BUZ 73A
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
200 V
ID
5.5 A
RDS(on)
0.6 Ω
Package
Ordering Code
BUZ 73 A
TO-220 AB
C67078-S1317-A3
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 37 ˚C
ID
A 5.5
Pulsed drain current
TC = 25 ˚C
IDpuls
22
IAR EAR EAS
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
ID = 7 A, VDD = 50 V, RGS = 25 � |
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BUZ73A | Comset Semiconductors |
N-Channel Enhancement Mode Power MOS Transistors SEMICONDUCTORS
BUZ73A N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
FEATURE
This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits and housed in a TO-220 envelope.
ABSOLUTE MAXIMUM RATINGS Symbol
VDS VSD IDS IDM VGS RDS(on |
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BUZ73AL | Siemens Semiconductor Group |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) BUZ 73 AL
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level
Pin 1 G Type BUZ 73 AL
Pin 2 D
Pin 3 S
VDS
200 V
ID
5.5 A
RDS(on)
0.6 Ω
Package TO-220 AB
Ordering Code C67078-S1328-A3
Maximum Ratings Parameter Continuous drain current Symbol Values 5.5 Unit A
ID IDpuls
22
TC = 37 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
7 6.5 mJ
ID = 7 A, VDD = |
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BUZ73AL | Infineon Technologies AG |
SIPMOS Power Transistor SIPMOS ® Power Transistor
BUZ 73AL
• N channel • Enhancement mode • Avalanche-rated • Logic Level
Pin 1
Pin 2
Pin 3
G
Type
D
Ordering Code
S
VDS
200 V
ID
5.5 A
RDS(on)
0.6 Ω
Package
BUZ 73 AL
TO-220 AB
C67078-S1328-A3
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 37 ˚C
ID
A 5.5
Pulsed drain current
TC = 25 ˚C
IDpuls
22
IAR EAR EAS
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
ID = 7 A, VDD = 50 |
[1]  [2]
Последние обновления
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2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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