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BUK7575-100A даташитФункция этой детали – «N-channel Trenchmos Standard Level Fet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
BUK7575-100A | NXP Semiconductors |
N-channel TrenchMOS standard level FET BUK7575-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 30 July 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Q101 compliant Suitable for standard level gate drive |
Это результат поиска, начинающийся с "7575", "BUK7575-1" |
Номер в каталоге | Производители | Описание | |
AD7575 | Analog Devices |
8-Bit ADC a
FEATURES Fast Conversion Time: 5 s On-Chip Track/Hold Low Total Unadjusted Error: 1 LSB Full Power Signal Bandwidth: 50 kHz Single +5 V Supply 100 ns Data Access Time Low Power (15 mW typ) Low Cost Standard 18-Lead DlPs or 20-Terminal
Surface Mount Packages
LC2MOS 5 s 8- |
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B0922J7575A50HF | Anaren Microwave |
Ultra Low Profile 0805 Balun 75 ohm to 75 ohm Balanced Model B0922J7575A50HF
Rev A
Ultra Low Profile 0805 Balun 75Ω to 75Ω Balanced
Description
The B0922J7575A50HF is a low cost, low profile sub-miniature unbalanced to balanced transformer designed for differential inputs and output locations on modern chipsets in an easy to use |
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B0922N7575AHF | Anaren Microwave |
Ultra Low Profile 0404 Balun 75 ohm to 75 ohm Balanced Model B0922N7575AHF
Rev A
Ultra Low Profile 0404 Balun 75Ω to 75Ω Balanced
Description
The B0922N7575AHF is a low profile, low impedance 1mm square subminiature wideband unbalanced to balanced transformer designed for differential inputs and output locations on modern chipse |
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BUK7575-55 | NXP Semiconductors |
TrenchMOS transistor Standard level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resista |
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BUK7575-55 | NXP Semiconductors |
TrenchMOS transistor Standard level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resista |
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BUK7575-55A | NXP Semiconductors |
N-channel TrenchMOS standard level FET TO -22 0A B
BUK7575-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 4 February 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |