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BSS84 даташитФункция этой детали – «P-channel 20-v (d-s) Mosfet». |
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Номер в каталоге | Производители | Описание | |
BSS84 | Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 SEPTEMBER 1995 7 PARTMARKING DETAIL SP
BSS84
D G S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Peak Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL BVDSS VGS(th) IDSS MIN. -50 -0.8 -1.5 -1 -2 -2.0 -15 -60 -100 Gate-Source Leakage Current Drain Source On-State Resistance (1) Forward Transconductance (1) (2) Input Capacitance (2) Output C |
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BSS84 | WEITRON |
Small Signal MOSFET BSS84
Small Signal MOSFET P-Channel
3 DRAIN
Features:
*Low On-Resistance : 10 *Low Input Capacitance: 30PF *Low Out put Capacitance : 10PF *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns
1 GATE
Application:
* DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc.
2 SOURCE
SOT-23
1 2
3
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Drain Current(tp 10us) |
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BSS84 | Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) BSS 84
SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level
• VGS(th) = -0.8...-2.0 V
Pin 1 G Type BSS 84 Type BSS 84 BSS 84
Pin 2 S Marking SPs
Pin 3 D
VDS
-50 V
ID
-0.13 A
RDS(on)
10 Ω
Package SOT-23
Ordering Code Q62702-S568 Q67000-S243
Tape and Reel Information E6327 E6433
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -50 -50 Unit V
VDS VDGR VGS ID
RGS = 20 kΩ
Gate source voltage Continuous drain current
± 20 A -0.13
TA = 30 °C |
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BSS84 | NXP Semiconductors |
P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BSS84 P-channel enhancement mode vertical D-MOS transistor
Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18
Philips Semiconductors
Product specification
P-channel enhancement mode vertical D-MOS transistor
FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interrupter in telephone sets • Relay, high speed and line |
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BSS84 | JCET |
P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETs
BSS84 P-CHANNEL MOSFET
V(BR)DSS
RDS(on)MAX
ID
-50 V
8Ω@-10V 10Ω@ -5V
-0.13A
DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.
FEATURE z Energy Efficient z Low Threshold Voltage z High-speed Switching z Miniature Surface Mount Package Saves Board Space
SOT-23
1. GATE 2. SOURCE 3. DRAIN
APPLICATION z DC−DC co |
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BSS84 | Fairchild Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor BSS84 — P-Channel Enhancement Mode Field-Effect Transistor
February 2013
BSS84 P-Channel Enhancement Mode Field-Effect Transistor
Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal
Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
D
D
S
SOT-23
G
G
Absolute Maximum Ratings
S
Description
This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. |
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BSS84 | Diodes Incorporated |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR BSS84
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -50V
RDS(on) max 10 @ VGS = -5V
ID TA = +25°C
-130mA
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch Power Management Functions Analog Switch
SOT23
Features and Benefits
Low On-Resistance Low Gate Threshold Voltage Low I |
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BSS84 | Chino-Excel Technology |
P-Channel Enhancement Mode MOSFET |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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