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BSS84 даташит

Функция этой детали – «P-channel 20-v (d-s) Mosfet».



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Номер в каталоге Производители Описание PDF
BSS84 Zetex Semiconductors
Zetex Semiconductors
  P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPTEMBER 1995 7 PARTMARKING DETAIL — SP BSS84 D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Peak Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL BVDSS VGS(th) IDSS MIN. -50 -0.8 -1.5 -1 -2 -2.0 -15 -60 -100 Gate-Source Leakage Current Drain Source On-State Resistance (1) Forward Transconductance (1) (2) Input Capacitance (2) Output C
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BSS84 WEITRON
WEITRON
  Small Signal MOSFET

BSS84 Small Signal MOSFET P-Channel 3 DRAIN Features: *Low On-Resistance : 10 *Low Input Capacitance: 30PF *Low Out put Capacitance : 10PF *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns 1 GATE Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. 2 SOURCE SOT-23 1 2 3 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Drain Current(tp 10us)
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BSS84 Siemens Semiconductor Group
Siemens Semiconductor Group
  SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

BSS 84 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Type BSS 84 Type BSS 84 BSS 84 Pin 2 S Marking SPs Pin 3 D VDS -50 V ID -0.13 A RDS(on) 10 Ω Package SOT-23 Ordering Code Q62702-S568 Q67000-S243 Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -50 -50 Unit V VDS VDGR VGS ID RGS = 20 kΩ Gate source voltage Continuous drain current ± 20 A -0.13 TA = 30 °C
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BSS84 NXP Semiconductors
NXP Semiconductors
  P-channel enhancement mode vertical D-MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interrupter in telephone sets • Relay, high speed and line
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BSS84 JCET
JCET
  P-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs BSS84 P-CHANNEL MOSFET V(BR)DSS RDS(on)MAX ID -50 V  8Ω@-10V  10Ω@ -5V   -0.13A   DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE z Energy Efficient z Low Threshold Voltage z High-speed Switching z Miniature Surface Mount Package Saves Board Space SOT-23 1. GATE 2. SOURCE 3. DRAIN APPLICATION z DC−DC co
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BSS84 Fairchild Semiconductor
Fairchild Semiconductor
  P-Channel Enhancement Mode Field Effect Transistor

BSS84 — P-Channel Enhancement Mode Field-Effect Transistor February 2013 BSS84 P-Channel Enhancement Mode Field-Effect Transistor Features  -0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V  Voltage-Controlled P-Channel Small-Signal Switch  High-Density Cell Design for Low RDS(ON)  High Saturation Current D D S SOT-23 G G Absolute Maximum Ratings S Description This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology.
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BSS84 Diodes Incorporated
Diodes Incorporated
  P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -50V RDS(on) max 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  General Purpose Interfacing Switch  Power Management Functions  Analog Switch SOT23 Features and Benefits  Low On-Resistance  Low Gate Threshold Voltage  Low I
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BSS84 Chino-Excel Technology
Chino-Excel Technology
  P-Channel Enhancement Mode MOSFET

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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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