DataSheet26.com


BSS138W даташит

Функция этой детали – «N-channel LogIC Level Enhancement Mode Field Effect Transistor».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
BSS138W Silikron
Silikron
  MOSFET ( Transistor )

Main Product Characteristics: VDSS RDS(on) 50V 1.4Ω (typ.) ID 0.2A SOT-323 Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  ESD Rating:1000V HBM  150℃ operating temperature BSS138W Marking and Pin Assignment Schematic Diagram Description: It utilizes the latest processing techniques to achieve the high cell density a
pdf
BSS138W Infineon Technologies AG
Infineon Technologies AG
  SIPMOS Small-Signal-Transistor

BSS138W SIPMOS® Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated Product Summary V DS R DS(on),max ID 60 3.5 0.28 V Ω A SOT-323 Type BSS138W BSS138W Package SOT-323 SOT-323 Ordering Code Q67042-S4187 Q67042-S4191 Tape and Reel Information E6327: 3000 pcs/reel E6433: 10000 pcs/reel Marking SWs SWs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,p
pdf
BSS138W Fairchild Semiconductor
Fairchild Semiconductor
  N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other swi
pdf
BSS138W Diodes Incorporated
Diodes Incorporated
  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed G G H K M A D SOT-323 Dim B C S Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0° Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8° A B C D E G H J K L M Mechanical Data Case: SOT-323, Molded Plastic Case Material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable p
pdf

[1]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты