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Datasheet BSS138PS Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BSS138PS | MOSFET, Transistor BSS138PS
60 V, 320 mA dual N-channel Trench MOSFET
Rev. 1 — 2 November 2010 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET t |  NXP Semiconductors | mosfet |
BSS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BSS100 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) BSS 100
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D
VDS
100 V
ID
0.22 A
RDS(on)
6Ω
Package TO-92
Ordering Code Q62702-S499 Q62702-S007 Q62702-S2  Siemens Semiconductor Group transistor | | |
| 2 | BSS100 | N-Channel Logic Level Enhancement Mode Field Effect Transistor September 1996
BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proces  Fairchild Semiconductor transistor | | |
| 3 | BSS101 | SIPMOS Small-Signal Transistor BSS 101
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 S Type BSS 101 Type BSS 101 BSS 101
Pin 2 G Marking SS 101
Pin 3 D
VDS
240 V
ID
0.13 A
RDS(on)
16 Ω
Package TO-92
Ordering Code Q62702-S493 Q62702-S636
Tape and Re  Siemens Semiconductor transistor | | |
| 4 | BSS110 | P-Channel Enhancement Mode Field Effect Transistor May 1999
BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-st Fairchild Semiconductor transistor | | |
| 5 | BSS110 | SIPMOS Small-Signal Transistor BSS 110
SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level
• VGS(th) = -0.8...-2.0 V
Pin 1 S Type BSS 110 Type BSS 110 BSS 110 BSS 110 Pin 2 G Marking SS 110 Pin 3 D
VDS
-50 V
ID
-0.17 A
RDS(on)
10 Ω
Package TO-92
Ordering Code Q62702-S500 Q62702-S278 Q67 Siemens Semiconductor transistor | | |
| 6 | BSS110 | P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BSS110 P-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC07 1995 Apr 07
Philips Semiconductors
Philips Semiconductors
Product specification
P-channel enhancement mode vertical D-MOS transistor
F NXP Semiconductors transistor | | |
| 7 | BSS119 | SIPMOS Small-Signal Transistor (N channel Enhancement mode) BSS 119
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.6 ...2.6 V
Pin 1 G
Pin 2 S
Pin 3 D
Type BSS 119 Type BSS 119
VDS
100 V
ID
0.17 A
RDS(on)
6Ω
Package SOT-23
Marking sSH
Ordering Code Q67000-S007
Tape and Reel Information E6327
Maximum Ratings Siemens Semiconductor Group transistor | |
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