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BSS138 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
36 BSS138   N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 PARTMARKING DETAIL 7 – SS BSS138 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 50 200 800 ± 20 360 -55 to +150 SOT23 UNIT V mA mA V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source B
Zetex Semiconductors
Zetex Semiconductors
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35 BSS138   Small Signal MOSFET N-Channel

BSS138 Small Signal MOSFET N-Channel 3 DRAIN Features: *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns 1 GATE Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. 2 SOURCE SOT-23 1 2 3 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Dr
WEITRON
WEITRON
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34 BSS138   N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD BSS138 N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE  DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.  FEATURES * RDS(ON) < 3.5Ω @ VGS=10 V, ID=0.22A * RDS(ON) < 6.0Ω @ VGS=4.5 V, ID=0.22A * Low Capacitance * Low Gate Charge * Fast Switching Capability * Ava
UTC
UTC
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33 BSS138   SMD Power MOSFET Transistor

SMD Power MOSFET Transistor (N-Channel) BSS138 SMD Power MOSFET Transistor (N-Channel) Features • Low On-Resistance:3.5Ω • Low input capacitance:40pF • Low output capacitance:12pF • Low threshole:1.5V • Fast switching speed:20nS • RoHS Compliance Application • DC to DC converter • Cellular & PCMCIA card • Cordless telephone • Power management in portable and battery etc. SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram
TAITRON
TAITRON
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32 BSS138   SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

BSS 138 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Type BSS 138 Type BSS 138 BSS 138 Pin 2 S Marking SSs Pin 3 D VDS 50 V ID 0.22 A RDS(on) 3.5 Ω Package SOT-23 Ordering Code Q67000-S566 Q67000-S216 Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 50 50 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drai
Siemens Semiconductor Group
Siemens Semiconductor Group
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31 BSS138   50V N-Channel Enhancement Mode MOSFET

BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • R , V @10V,I @500mA=3Ω DS(ON) GS DS • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • ESD Protected • In compliance with EU RoHS 2002/95/EC
Pan Jit International
Pan Jit International
pdf
30 BSS138   N-Channel Logic Level Enhancement Mode Field Effect Transistor

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National Semiconductor
National Semiconductor
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29 BSS138   N-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 V(BR)DSS 50 V N-Channel 50-V(D-S) MOSFET RDS(on)MAX  3.5Ω@10V  6Ω@4.5V   ID 220mA SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE z High density cell design for extremely low RDS(on) z Rugged and Relaible APPLICATION z Direct Logic-Level Interface: TTL/CMOS z Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. z Battery Operated Systems z Solid-State Relays MARKING Equivalent Circuit Maximum
JCET
JCET
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Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
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HYDIS
HYDIS
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