|
BSS123W даташитФункция этой детали – «N-channel LogIC Level Enhancement Mode Field Effect Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
BSS123W | Fairchild Semiconductor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS123W — N-Channel Logic Level Enhancement Mode Field Effect Transistor
December 2015
BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor
Features
• 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V
• High Density Cell Design for Low RDS(ON) • Rugged and Reliable
• Ultra Small Surface Mount Package
• Very Low Capacitance
• Fast Switching Speed
• Lead Free / RoHS Compliant
Description
This N-channel enhancement mode field effect transistor is produced using |
|
BSS123W | Diodes |
N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary
V(BR)DSS 100V
RDS(ON) 6.0Ω @ VGS = 10V
ID TA = +25°C
170mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
• Small Servo Motor Control • Power MOSFET Gate Drivers • Switching Applications
BSS123W
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low In |
|
BSS123WQ | Diodes |
N-CHANNEL ENHANCEMENT MODE MOSFET BSS123WQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) 6.0Ω @ VGS = 10V
ID TA = +25°C
170mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features and Benefits
Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |