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Datasheet BSH106 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | BSH106 | N-channel enhancement mode MOS transistor Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
FEATURES
• Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package
BSH106
SYMBOL
d
QUICK REFERENCE DATA
VDS = 20 V ID = 1.05 A
g
RDS(ON) ≤ 250 m� |
NXP Semiconductors |
BSH Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
BSH103 | N-channel enhancement mode MOS transistor |
NXP Semiconductors |
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BSH201 | P-channel enhancement mode MOS transistor |
NXP Semiconductors |
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BSH108 | N-channel enhancement mode field-effect transistor |
NXP Semiconductors |
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Número de pieza | Descripción | Fabricantes | |
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