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BLF2425M8L140 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
10 BLF2425M6L180P   Power LDMOS transistor

BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp (MHz) (mA) (V) (W) (dB) CW 2450 10 28 180 13.3 D (%) 53.5 1.2 Features and benefit
NXP
NXP
pdf
9 BLF2425M6LS180P   Power LDMOS transistor

BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp (MHz) (mA) (V) (W) (dB) CW 2450 10 28 180 13.3 D (%) 53.5 1.2 Features and benefit
NXP
NXP
pdf
8 BLF2425M7L100   Power LDMOS transistor

BLF2425M7L100; BLF2425M7LS100 Power LDMOS transistor Rev. 1 — 6 December 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2300 to 2400 900 28 20 18 27 46[1] - 1 car
NXP
NXP
pdf
7 BLF2425M7L140   Power LDMOS transistor

BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance Typical RF performance at Tcase = 25 C; IDq
NXP
NXP
pdf
6 BLF2425M7L250P   Power LDMOS transistor

BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance RF performance at Tcase = 25 C in a com
NXP
NXP
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5 BLF2425M7LS100   Power LDMOS transistor

BLF2425M7L100; BLF2425M7LS100 Power LDMOS transistor Rev. 1 — 6 December 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2300 to 2400 900 28 20 18 27 46[1] - 1 car
NXP
NXP
pdf
4 BLF2425M7LS140   Power LDMOS transistor

BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance Typical RF performance at Tcase = 25 C; IDq
NXP
NXP
pdf
3 BLF2425M7LS250P   Power LDMOS transistor

BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance RF performance at Tcase = 25 C in a com
NXP
NXP
pdf



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Номер в каталоге Описание Производители PDF
CD4515BC

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Fairchild Semiconductor
Fairchild Semiconductor
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HYDIS
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