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Datasheet BF998 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BF998 | Silicon N-channel dual-gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF998; BF998R Silicon N-channel dual-gate MOS-FETs
Product specification Supersedes data of April 1991
1996 Aug 01
NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
Product specification
BF998; BF998R
FEATURES Short channel transistor with high forwa |  NXP Semiconductors | gate |
| 2 | BF998 | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode BF998/BF998R/BF998RW
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input and mixer stages in UHF tuners.
Features
D D D D
Integrated gate protection diodes Low noise figure Low feedbac |  Vishay Telefunken | gate |
| 3 | BF998 | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise Silicon N Channel MOSFET Tetrode
BF 998
Features
q q
Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz
Type BF 998
Marking MO
Ordering Code (tape and reel) Q62702-F1129
Pin Configuration 1 2 3 4 S D G2 G1
Package1) SOT-143
Maximum |  Siemens Semiconductor Group | mosfet |
| 4 | BF998 | Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode
• Short-channel transistor with high S / C quality factor
• For low-noise, gain-controlled input stage up to 1 GHz
• Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF998...
ESD (Electrostatic discharge) sensitive device, observe handling |  Infineon Technologies AG | mosfet |
| 5 | BF998A | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode BF998/BF998R/BF998RW
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input and mixer stages in UHF tuners.
Features
D D D D
Integrated gate protection diodes Low noise figure Low feedbac | Vishay Telefunken | gate |
BF9 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BF900 | Sicherungshalter Type BF900 Sicherungshalter
IEC 60127-6 250V 6,3A
Bezeichnung / Kennzeichnung
Bestellnummer MBL Isoliermaterial Kontakte Gewicht Nennstrom Nennspannung Verlustleistung (Tu < 40°C) Kontaktwiderstand Isolationswiderstand (Kontakte) Durchschlagfestigkeit Verpackung Approbationen
Sicherungshalter f�  Inter Control data | | |
| 2 | BF901 | Silicon n-channel dual gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF901; BF901R Silicon n-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
FEATURES • Intended for low voltage operation NXP Semiconductors gate | | |
| 3 | BF901R | Silicon n-channel dual gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF901; BF901R Silicon n-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
FEATURES • Intended for low voltage operation NXP Semiconductors gate | | |
| 4 | BF9024SPD-M | P-Channel MOSFET and Schottky Diode BF9024SPD-M
BYD Microelectronics Co., Ltd
P-Channel MOSFET and Schottky Diode
General Description
The BF9024SPD-M uses advanced trench technology to Provide excellent RDS (ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications.
8
7
6
5
Features MOSFE  BYD mosfet | | |
| 5 | BF9028DND-A | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DND-A
20V N-Channel MOSFET
General Description
The BF9028DND-A is a Dual N-Channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics.
D D DD 87 6 5
Features BYD mosfet | | |
| 6 | BF9028DND-GE | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DND-GE
20V N-Channel MOSFET
General Description
The BF9028DND-GE is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics.
Features
z VDS=24 V z BYD mosfet | | |
| 7 | BF9028DNT | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DNT
20V N-Channel MOSFET
85
General Description
The BF9028DNT is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. .
TSSOP-8
1 : drain1 2, BYD mosfet | |
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