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BF998 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
18 BF998   N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode

BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gain 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 BF998 Marking: MO Plastic case (SOT 143) 1 = Source, 2 = Drain
Vishay Telefunken
Vishay Telefunken
pdf
17 BF998   Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)

Silicon N Channel MOSFET Tetrode BF 998 Features q q Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz Type BF 998 Marking MO Ordering Code (tape and reel) Q62702-F1129 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TS < 76 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - soldering point Rth JS <
Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
16 BF998   Silicon N-channel dual-gate MOS-FETs

DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Silicon N-channel dual-gate MOS-FETs Product specification BF998; BF998R FEATURES  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS  VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communicati
NXP
NXP
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15 BF998   Silicon N-Channel MOSFET Tetrode

Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF998... ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF998 SOT143 1=S 2=D 3=G2 4=G1 - - BF998R SOT143R 1=D 2=S 3=G1 4=G2 - - Maximum Ratings Parameter Symbol Drain-source voltage Continuous drain current Gate 1/ gate 2-sou
Infineon Technologies AG
Infineon Technologies AG
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14 BF998A   N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode

BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gain 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 BF998 Marking: MO Plastic case (SOT 143) 1 = Source, 2 = Drain
Vishay Telefunken
Vishay Telefunken
pdf
13 BF998B   N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode

BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gain 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 BF998 Marking: MO Plastic case (SOT 143) 1 = Source, 2 = Drain
Vishay Telefunken
Vishay Telefunken
pdf
12 BF998R   N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode

BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gain 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 BF998 Marking: MO Plastic case (SOT 143) 1 = Source, 2 = Drain
Vishay Telefunken
Vishay Telefunken
pdf
11 BF998R   Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)

BF 998R Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 998R Marking Ordering Code MOs Q62702-F1177 PIN Configuration 1=D 2=S Package 3 = G1 4 = G2 SOT-143R All electrical data identical to the corresponding type without " R ". Semiconductor Group 1 Oct-23-1996 BF 998R Package Semiconductor Group
Siemens Semiconductor Group
Siemens Semiconductor Group
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