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BF1009 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
5 BF1009   Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network

BF 1009 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized bias network 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1009 Marking Ordering Code Pin Configuration JKs Q62702-F1613 1 = S 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power di
Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
4 BF1009S   Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)

BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1628 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 BF 1009S JLs Maximum Ratings Parameter Drain-source voltage Symbol Value 12 25 10 3 200 -55 ...+150 150 Unit V mA V mW °C VDS ID ±I G1/2SM +VG1SE Continuos drain current Gate 1/gate
Siemens Semiconductor Group
Siemens Semiconductor Group
pdf
3 BF1009S   Silicon N-Channel MOSFET Tetrode

BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1009S BF1009SR Maximum Ratings Parameter Package SOT143 SOT143R 1=S 1=D 2=D 2=S Pin Configuration 3=G2 3=G1 4=G1 4=G2 Value 12 25 10 3 200 200 Tstg Tch -55 ... 150 150 Marking JLs JLs Unit V mA V mW Symbol VDS ID ±I
Infineon Technologies AG
Infineon Technologies AG
pdf
2 BF1009SR   Silicon N-Channel MOSFET Tetrode

BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1009S BF1009SR Maximum Ratings Parameter Package SOT143 SOT143R 1=S 1=D 2=D 2=S Pin Configuration 3=G2 3=G1 4=G1 4=G2 Value 12 25 10 3 200 200 Tstg Tch -55 ... 150 150 Marking JLs JLs Unit V mA V mW Symbol VDS ID ±I
Infineon Technologies AG
Infineon Technologies AG
pdf
1 BF1009SW   Silicon N-Channel MOSFET Tetrode

BF1009SW Silicon N-Channel MOSFET Tetrode  For low noise, high gain controlled 3 4 input stages up to 1GHz  Operating voltage 9V  Integrated bias network Drain AGC HF Input G2 G1 HF Output + DC 2 1 VPS05605 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1009SW Maximum Ratings Parameter Drain-source voltage Marking JLs 1=D Pin Configuration 2=S 3 = G1 4 = G2 Package SOT343 Unit V mA V mW °C Symbol VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch Value 12 25 10 3 200 -
Infineon
Infineon
pdf



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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
pdf

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