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Datasheet BDY53 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BDY53 | NPN SILICON TRANSISTORS DIFFUSED MESA |
 ETC |
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| 3 | BDY53 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDY53
DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)=60V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A ·High Switching Speed
APPLICATIONS ·Designed for general-purpos |
 Inchange Semiconductor |
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| 2 | BDY53 | (BDY53 / BDY54) NPN SILICON TRANSISTORS NPN BDY53 – BDY54 SILICON TRANSISTORS, DIFFUSED MESA
They are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO VCBO VEBO IC IB PTOT Collector-Emitter Voltage Collector-Base Voltage Emitter-Base |
 Comset Semiconductors |
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| 1 | BDY53 | Trans GP BJT NPN 120V 12A 3-Pin(2+Tab) TO-3 |
 New Jersey Semiconductor |
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