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BDX34 даташитФункция этой детали – «PNP SilICon Power Darlingtons». |
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Номер в каталоге | Производители | Описание | |
BDX34 | TRANSYS |
(BDX33 / BDX34) NPN/PNP PLASTIC POWER TRANSISTORS Transys
Electronics
L I M I T E D
NPN/PNP PLASTIC POWER TRANSISTORS
BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package
Power Darlington for Linear Switchilng Application
ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD
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BDX34 | SavantIC |
Silicon PNP Power Transistors SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX34/A/B/C
DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX33/A/B/C
APPLICATIONS ·For power linear and switching
applications
PINNING PIN 1 2 3
DESCRIPTION
Base Collector;connected to mounting base Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BDX34
VCBO
Collector-base voltage
BDX34A BDX34B
BDX34C
BDX34
VCEO
BDX34A Collector-emitter voltage
BDX34B
BDX34C
VEBO IC ICM IB |
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BDX34 | Power Innovations Limited |
Transistor de puissance PNP darlington BDX34, BDX34A, BDX34B, BDX34C, BDX34D Transistor de puissance PNP darlington
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
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Transistor complémentaire conçut pour être utilisé avec BDX33, BDX33A, BDX33B, BDX33C and BDX33D 70 W à 25°C Température du boîtier
B
Boîtier TO-220 Vue de dessus
q q q
1 2 3
10 A Courant continu de collecteur Minimum hFE of 750 at 3 V, 3 A
C E
La broche 2 est en contact avec le boîtier
MDTRACA
Valeurs limites absolues à une températeur boî |
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BDX34 | Power Innovations Limited |
PNP SILICON POWER DARLINGTONS |
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BDX34 | Multicomp |
Darlington Transistors BDX33, 34
Darlington Transistors
Features:
• Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C
• Monolithic construction with Built-in Base-Emitter shunt resistor.
Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case)
Dimensions Minimum Maximum
A
14.68
15.31
B 9.78 10.42
C 5.01 6.52
D
13.06
14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Milli |
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BDX34 | Mospec Semiconductor |
POWER TRANSISTORS(10A/70W) A
A
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BDX34 | Fairchild Semiconductor |
Power Linear and Switching Applications BDX34/A/B/C
BDX34/A/B/C
Power Linear and Switching Applications
• High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively
1
TO-220 2.Collector 3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BDX34 : BDX34A : BDX34B : BDX34C VCEO Collector-Emitter Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipa |
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BDX34 | Comset Semiconductors |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The BDX34B, BDX34B and BDX34C are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary NPN types are the BDX33A, BDX33B and BDX33C respectively. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Collector-Emitter Voltage
Ratings
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Value
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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