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BDX34 даташит

Функция этой детали – «PNP SilICon Power Darlingtons».



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BDX34 TRANSYS
TRANSYS
  (BDX33 / BDX34) NPN/PNP PLASTIC POWER TRANSISTORS

Transys Electronics L I M I T E D NPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package Power Darlington for Linear Switchilng Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD ww
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BDX34 SavantIC
SavantIC
  Silicon PNP Power Transistors

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification BDX34/A/B/C DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX33/A/B/C APPLICATIONS ·For power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BDX34 VCBO Collector-base voltage BDX34A BDX34B BDX34C BDX34 VCEO BDX34A Collector-emitter voltage BDX34B BDX34C VEBO IC ICM IB
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BDX34 Power Innovations Limited
Power Innovations Limited
  Transistor de puissance PNP darlington

BDX34, BDX34A, BDX34B, BDX34C, BDX34D Transistor de puissance PNP darlington Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Transistor complémentaire conçut pour être utilisé avec BDX33, BDX33A, BDX33B, BDX33C and BDX33D 70 W à 25°C Température du boîtier B Boîtier TO-220 Vue de dessus q q q 1 2 3 10 A Courant continu de collecteur Minimum hFE of 750 at 3 V, 3 A C E La broche 2 est en contact avec le boîtier MDTRACA Valeurs limites absolues à une températeur boî
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BDX34 Power Innovations Limited
Power Innovations Limited
  PNP SILICON POWER DARLINGTONS

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BDX34 Multicomp
Multicomp
  Darlington Transistors

BDX33, 34 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C • Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Milli
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BDX34 Mospec Semiconductor
Mospec Semiconductor
  POWER TRANSISTORS(10A/70W)

A A
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BDX34 Fairchild Semiconductor
Fairchild Semiconductor
  Power Linear and Switching Applications

BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX34 : BDX34A : BDX34B : BDX34C VCEO Collector-Emitter Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipa
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BDX34 Comset Semiconductors
Comset Semiconductors
  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX34B, BDX34B and BDX34C are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary NPN types are the BDX33A, BDX33B and BDX33C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Collector-Emitter Voltage Ratings www.DataSheet.net/ Value BD
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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