BD241C PDF Datasheet

BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features • High Current Gain − Bandwidth Product • Compact TO−220 AB Package • Epoxy Meets UL94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

BD241A BD241C NPN power transistors Features ■ NPN transistors Applications ■ Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD242A and BD242C.

BD241/A/B/C BD241/A/B/C Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively TO-220 2.Collector 3.Emitter 1 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Collector-Emitter Voltage : BD241 : BD241A : BD241B

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD241C/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min.) BD242B VCEO(sus) = 10

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