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BCW71 даташит

Функция этой детали – «General Purpose Transistor».



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Номер в каталоге Производители Описание PDF
BCW71 Vishay
Vishay
  Small Signal Transistor

VISHAY Small Signal Transistor (NPN) BCW71 to BCW72 Vishay Semiconductors Features • NPN Silicon Epitaxial Planar Transistors • Suited for low level, general purpose applications. • Low current, low voltage. • As complementary types, BCW69 and BCW70 PNP transistors are recommended. Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.8 mg Marking: BCW71 = K1 BCW71 = K2 Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Pinning: 1 = Base,
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BCW71 TOPSKY TECHNOLOGY
TOPSKY TECHNOLOGY
  NPN General Purpose Amplifier

NPN General Purpose Amplifier FEATURES z Low current(max.100mA). z Low voltage(max.45V). z Low noise. Pb Lead-free APPLICATIONS z General purpose switching and amplification. Production specification BCW71/BCW72 ORDERING INFORMATION Type No. Marking BCW71 BCW72 K1 K2 SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC ICM PC Rth j-a Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -C
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BCW71 Samsung semiconductor
Samsung semiconductor
  NPN EPITAXIAL SILICON TRANSISTOR

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BCW71 ROHM Semiconductor
ROHM Semiconductor
  NPN Transistor

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BCW71 NXP Semiconductors
NXP Semiconductors
  NPN general purpose transistors

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCW71; BCW72 NPN general purpose transistors Product data sheet Supersedes data of 1997 Mar 06 1999 Apr 19 NXP Semiconductors NPN general purpose transistors Product data sheet BCW71; BCW72 FEATURES • Low current (100 mA) • Low voltage (45 V) • Low noise. APPLICATIONS • General purpose switching and amplification. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BCW69 and
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BCW71 Multicomp
Multicomp
  NPN General Purpose Amplifier

NPN General Purpose Amplifier Features: •  Low Current (Max.100mA) •  Low Voltage (Max.45V) •  Low Noise Applications: •  General Purpose Switching and Amplification Collector 3 1 Base 2 Emitter Pin Configuration: 1. Base 2. Emitter 3. Collector Maximum Ratings Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Continuous Collector Current - Peak Peak Base Current Total Power Dissipation Thermal resistance from junction to ambient Junction and Stora
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BCW71 Motorola Semiconductors
Motorola Semiconductors
  GENERAL PURPOSE TRANSISTOR

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO VEBO ic THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, T"a = 25°C Derate above 25°C PD Storage Temperature Tstg Thermal Resistance Junction to Ambient R&JA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 45 50 5.0 100 Max 350 2.8 150 357 Unit Vdc Vdc Vdc mAdc Unit mW mW/X °C °C/W BCW71,72 CASE 318-02/03, STYLE 6 SOT-23 (TO-2
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BCW71 Kexin
Kexin
  NPN Transistors

SMD Type Transistors NPN Transistors BCW71~BCW72 (KCW71~KCW72) ■ Features ● Low current (100 mA) ● Low voltage (45 V) ● Low noise. ● PNP complements: BCW69 and BCW70. +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Base 2. Emitter 3. Collector 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Curre
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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