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BC858B даташитФункция этой детали – «PNP SilICon Af Transistor». |
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Номер в каталоге | Производители | Описание | |
BC858B | WEITRON |
General Purpose Transistor PNP Silicon BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C
General Purpose Transistor PNP Silicon
COLLECTOR 3
1 BASE
2 EMITTER
Maximum Ratings ( TA=25 C unless otherwise noted)
3
1 2
SOT-23
MARKING DIAGRAM 3
XX = Device Code (See 1 2 Table Below)
Rating
Collector-Emitter Voltage
BC856
BC857
BC858,BC859
Collector-Base Voltage
BC856
BC857
BC858,BC859
Emitter-Base VOltage
Collector Current-Continuous
Symbol VCEO
VCBO VEBO
IC
Value -65 -45 -30 -80 -50 -30 -5.0
-100
Unit V
V V mAdc
Thermal Characteristics
Characteristics T |
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BC858B | TRSYS |
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR |
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BC858B | Taiwan Semiconductor |
0.2 Watts PNP Plastic-Encapsulate Transistors BC856A/B, BC857A/B/C, BC858A/B/C
200mW, PNP Small Signal Transistor
Small Signal Product
Features
◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOT-23
Mechanical Data
◇ Case : SOT- 23 small outline plastic package ◇ Terminal : Matte tin plated, lead free, solderable
per |
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BC858B | TAITRON |
SMD General Purpose Transistor SMD General Purpose Transistor (PNP)
Features
• PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications
Mechanical Data
Case: Terminals:
Weight:
SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram
SMD General Purpose Transistor (PNP)
BC856/BC857/BC858
SOT-23
Marking Information
Marking Code
BC856A 3A
BC856B 3B
BC857A 3E
BC857B 3F
BC857C 3G
BC858A 3J
BC858B 3K
BC858C 3L
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
-VCBO -VCEO -VEBO
-IC P |
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BC858B | STMicroelectronics |
SMALL SIGNAL PNP TRANSISTORS BC857 BC858
SMALL SIGNAL PNP TRANSISTORS
Type BC857A BC857B BC858A BC858B
Marking 3E 3F 3J 3K
s SILICON EPITAXIAL PLANAR PNP TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS
s VERY LOW NOISE AF AMPLIFIER s NPN COMPLEMENTS FOR BC857 IS BC847
2
3 1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
VCES V CBO V CEO V EBO
IC ICM IBM IEM Ptot Tstg Tj
Collector-Emit ter Voltage (VBE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = |
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BC858B | Siemens Semiconductor Group |
PNP Silicon AF Transistors PNP Silicon AF Transistors
BC 856 ... BC 860
Features
q For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kHz q Complementary types: BC 846, BC 847,
BC 849, BC 850 (NPN)
Type
BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 B BC 859 C BC 860 B BC 860 C
Marking
3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs
Ordering Code (tape and reel)
Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1 |
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BC858B | SeCoS |
General Purpose Transistor PNP Elektronische Bauelemente
BC856A, B BC857A, B, C BC858A, B, C
FEATURES
A suffix of "-C" specifies halogen & lead-free
n General Purpose Transistor PNP Type n Collect current : - 0.1A n Operating Temp. : -55OC ~ +150 OC n RoHS compliant product
A L
3
Top View
12
BS
C OLLE C TOR 3
1 B AS E
3
1 2
V D
G
C H
K
2 E MITTE R
SOT-23 Dim Min Max
A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 J L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in |
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BC858B | ROHM Semiconductor |
PNP General Purpose Transistor Transistors
BC858BW / BC858B
PNP General Purpose Transistor
BC858BW / BC858B
zFeatures 1) BVCEO < -30V (IC=-1mA) 2) Complements the BC848B / BC848BW.
zPackage, marking and packaging specifications
Paet No. Pakaging type
Marking Code
Basic ordering unit (pieces)
BC858BW UMT3 G3K T106 3000
BC858B SST3 G3K T116 3000
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Symbol VCBO VCEO VEBO IC
Collector power dissipation
PC
Junct |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |