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BC858B даташит

Функция этой детали – «PNP SilICon Af Transistor».



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Номер в каталоге Производители Описание PDF
BC858B WEITRON
WEITRON
  General Purpose Transistor PNP Silicon

BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 1 BASE 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) 3 1 2 SOT-23 MARKING DIAGRAM 3 XX = Device Code (See 1 2 Table Below) Rating Collector-Emitter Voltage BC856 BC857 BC858,BC859 Collector-Base Voltage BC856 BC857 BC858,BC859 Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -65 -45 -30 -80 -50 -30 -5.0 -100 Unit V V V mAdc Thermal Characteristics Characteristics T
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BC858B TRSYS
TRSYS
  PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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BC858B Taiwan Semiconductor
Taiwan Semiconductor
  0.2 Watts PNP Plastic-Encapsulate Transistors

BC856A/B, BC857A/B/C, BC858A/B/C 200mW, PNP Small Signal Transistor Small Signal Product Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code SOT-23 Mechanical Data ◇ Case : SOT- 23 small outline plastic package ◇ Terminal : Matte tin plated, lead free, solderable per
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BC858B TAITRON
TAITRON
  SMD General Purpose Transistor

SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (PNP) BC856/BC857/BC858 SOT-23 Marking Information Marking Code BC856A 3A BC856B 3B BC857A 3E BC857B 3F BC857C 3G BC858A 3J BC858B 3K BC858C 3L Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol -VCBO -VCEO -VEBO -IC P
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BC858B STMicroelectronics
STMicroelectronics
  SMALL SIGNAL PNP TRANSISTORS

BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type BC857A BC857B BC858A BC858B Marking 3E 3F 3J 3K s SILICON EPITAXIAL PLANAR PNP TRANSISTORS s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS s VERY LOW NOISE AF AMPLIFIER s NPN COMPLEMENTS FOR BC857 IS BC847 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS S ym b o l Parameter VCES V CBO V CEO V EBO IC ICM IBM IEM Ptot Tstg Tj Collector-Emit ter Voltage (VBE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB =
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BC858B Siemens Semiconductor Group
Siemens Semiconductor Group
  PNP Silicon AF Transistors

PNP Silicon AF Transistors BC 856 ... BC 860 Features q For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kHz q Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 B BC 859 C BC 860 B BC 860 C Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs Ordering Code (tape and reel) Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1
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BC858B SeCoS
SeCoS
  General Purpose Transistor PNP

Elektronische Bauelemente BC856A, B BC857A, B, C BC858A, B, C FEATURES A suffix of "-C" specifies halogen & lead-free n General Purpose Transistor PNP Type n Collect current : - 0.1A n Operating Temp. : -55OC ~ +150 OC n RoHS compliant product A L 3 Top View 12 BS C OLLE C TOR 3 1 B AS E 3 1 2 V D G C H K 2 E MITTE R SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 J L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in
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BC858B ROHM Semiconductor
ROHM Semiconductor
  PNP General Purpose Transistor

Transistors BC858BW / BC858B PNP General Purpose Transistor BC858BW / BC858B zFeatures 1) BVCEO < -30V (IC=-1mA) 2) Complements the BC848B / BC848BW. zPackage, marking and packaging specifications Paet No. Pakaging type Marking Code Basic ordering unit (pieces) BC858BW UMT3 G3K T106 3000 BC858B SST3 G3K T116 3000 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Collector power dissipation PC Junct
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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