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BC856AW даташитФункция этой детали – «PNP General Purpose Transistors». |
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Номер в каталоге | Производители | Описание | |
BC856AW | Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
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BC856AW | SeCoS |
General Purpose Transistor PNP Elektronische Bauelemente
BC856AW, BW BC857AW, BW, CW BC858AW, BW, CW
FEATURES
RoHS Compliant Product
* Ideally suited for automatic insertion
* For Switching and AF Amplifier Applications * Operating Temp. : -55OC ~ +150OC
A L
C OLLE C TOR 3
1 B AS E
2 E MITTE R
3
1 2
3
Top View
12
VG
BS
C DH
K
SOT-323 Dim Min Max
A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 J L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm
MAXIMUM RATINGS* TA |
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BC856AW | NXP Semiconductors |
PNP general purpose transistors DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BC856W; BC857W; BC858W PNP general purpose transistors
Product data sheet Supersedes data of 1999 Apr 12
2002 Feb 04
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856W; BC857W; BC858W
FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V).
APPLICATIONS • General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package. NPN complements: BC846W, BC847W and BC848W.
MARKING
TYPE NUMB |
|
BC856AW | Infineon Technologies AG |
PNP Silicon AF Transistors BC856W...BC860W
PNP Silicon AF Transistors
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types:
3
BC846W, BC847W, BC848W BC849W, BC850W (NPN)
2 1
VSO05561
Type BC856AW BC856BW BC857AW BC857BW BC857CW BC858AW BC858BW BC858CW BC859AW BC859BW BC859CW BC860BW BC860CW
Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E |
|
BC856AW | Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors BC 856W ... BC 860W PNP
General Purpose Transistors PNP
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung
2±0.1
0.3
3
200 mW SOT-323 0.01 g
1±0.1
1.25±0.1
Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
Type Code
1 2
1.3
Dimensions / Maße in mm |
|
BC856AW | DIODES |
PNP SMALL SIGNAL TRANSISTOR Features
Ideally Suited for Automatic Insertion Complementary NPN Types Available (BC846AW – BC848CW) For switching and AF Amplifier Applications Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP capable (Note 4)
BC856AW-BC858CW
PNP SMALL SIGNAL TRANSISTOR IN SOT323
Mechanical Data
Case: SOT323 Case material: molded plastic, “Green” molding compound UL Flammabil |
|
BC856AW-G | Comchip |
Small Signal Transistor Small Signal Transistor
BC856AW-G Thru. BC858CW-G (PNP)
RoHS Device
Features
-Ideally suited for automatic insertion
-For Switching and AF Amplifier Applications
-Power dissipation PCM: 0.15W (@TA=25°C)
-Collector current ICM: -0.1A
-Collector-base voltage VCBO: BC856W= -80V BC857W= -50V BC858W= -30V
-Operating and storage junction temperature range: TJ, TSTG= -65 to +150°C
SOT-323
0.053(1.35) 0.045(1.15)
0.039 (1.00) 0.035 (0.90)
0.087 (2.20) 0.079 (2.00)
3
12
0.055 (1.40) 0.047 (1.20)
0.006 (0.15) 0.003 (0.08 |
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BC856AWT1 | Motorola Inc |
General Purpose Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC856AWT1/D
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.
1 BASE
COLLECTOR 3
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,
CWT1
Motorola Preferred Devices
MAXIMUM RATINGS
2 EMITTER
Rating
Symbol BC856 BC857 BC858 Unit
Collector – Emitter Voltage
VCEO –65 –45 –30
V
Collecto |
[1]  [2]
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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