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BC847W даташитФункция этой детали – «NPN General Purpose Transistors». |
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Номер в каталоге | Производители | Описание | |
BC847W | Philips |
NPN general purpose transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BC846W; BC847W NPN general purpose transistors
Product specification Supersedes data of 1997 Mar 27
1999 Apr 23
Philips Semiconductors
NPN general purpose transistors
Product specification
BC846W; BC847W
FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V).
APPLICATIONS • General purpose switching and amplification.
PINNING
PIN 1 2 3
base emitter collector
DESCRIPTION
DESCRIPTION
NPN transistor in a SC70; SOT323 plastic package. PNP c |
|
BC847W | NXP Semiconductors |
100 mA NPN general-purpose transistors BC847 series
45 V, 100 mA NPN general-purpose transistors
Rev. 9 — 23 September 2014
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number[1]
Package
NXP
BC847
SOT23
BC847A
BC847B
BC847C
BC847W
SOT323
BC847AW
BC847BW
BC847CW
BC847T
SOT416
BC847AT
BC847BT
BC847CT
BC847AM
SOT883
BC847BM
BC847CM
JEITA -
SC-70
SC-75
SC-101
[1] Valid for all available selection groups |
|
BC847W | Kexin |
NPN General Purpose Transistor SMD Type
TransistIoCrs
NPN General Purpose Transistor BC846W,BC847W,BC848W
Features
Low current (max. 100 mA). Low voltage (max. 65 V).
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient
1 Emitter 2 Base 3 Collector
Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Ts |
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BC847W | KEC |
EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION .
FEATURES High Voltage : BC846W VCEO=65V. For Complementary With PNP Type BC856W/857W/858W.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
BC846W BC847W BC848W
VCBO
Collector-Emitter Voltage
BC846W BC847W BC848W
VCEO
BC846W
Emitter-Base Voltage
BC847W
BC848W
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VEBO
IC IE PC Tj Tstg
RATING 80 50 |
|
BC847W | Infineon Technologies AG |
PNP Silicon AF Transistors |
|
BC847W | Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors BC 846W ... BC 850W NPN
General Purpose Transistors NPN
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung
2±0.1
0.3
3
200 mW SOT-323 0.01 g
1±0.1
1.25±0.1
Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
Type Code
1 2
1.3
Dimensions / Maße in mm |
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BC847W-AU | Pan Jit |
(BC846AW-AU - BC850CW-AU) NPN GENERAL PURPOSE TRANSISTORS BC846AW-AU ~ BC850CW-AU
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE FEATURES
• General purpose amplifier applications • NPN epitaxial silicon, planar design • • • • • Collector current IC = 100mA Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in comply with EU RoHS 2011/65/EU directives Green molding compound as per IEC61249 Std. . (Halogen Free)
30/45/65 Volts
POWER
250 mWatts
MECHANICAL DATA
• Case: SOT-323, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Ap |
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BC847W-AU | Pan Jit |
(BC846AW-AU - BC850CW-AU) NPN GENERAL PURPOSE TRANSISTORS |
[1]  [2]
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |