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BC847W даташит

Функция этой детали – «NPN General Purpose Transistors».



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Номер в каталоге Производители Описание PDF
BC847W Philips
Philips
  NPN general purpose transistors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC846W; BC847W NPN general purpose transistors Product specification Supersedes data of 1997 Mar 27 1999 Apr 23 Philips Semiconductors NPN general purpose transistors Product specification BC846W; BC847W FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP c
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BC847W NXP Semiconductors
NXP Semiconductors
  100 mA NPN general-purpose transistors

BC847 series 45 V, 100 mA NPN general-purpose transistors Rev. 9 — 23 September 2014 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NXP BC847 SOT23 BC847A BC847B BC847C BC847W SOT323 BC847AW BC847BW BC847CW BC847T SOT416 BC847AT BC847BT BC847CT BC847AM SOT883 BC847BM BC847CM JEITA - SC-70 SC-75 SC-101 [1] Valid for all available selection groups
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BC847W Kexin
Kexin
  NPN General Purpose Transistor

SMD Type TransistIoCrs NPN General Purpose Transistor BC846W,BC847W,BC848W Features Low current (max. 100 mA). Low voltage (max. 65 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient 1 Emitter 2 Base 3 Collector Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Ts
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BC847W KEC
KEC
  EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES High Voltage : BC846W VCEO=65V. For Complementary With PNP Type BC856W/857W/858W. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage BC846W BC847W BC848W VCBO Collector-Emitter Voltage BC846W BC847W BC848W VCEO BC846W Emitter-Base Voltage BC847W BC848W Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VEBO IC IE PC Tj Tstg RATING 80 50
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BC847W Infineon Technologies AG
Infineon Technologies AG
  PNP Silicon AF Transistors

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BC847W Diotec Semiconductor
Diotec Semiconductor
  Surface mount Si-Epitaxial PlanarTransistors

BC 846W ... BC 850W NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2±0.1 0.3 3 200 mW SOT-323 0.01 g 1±0.1 1.25±0.1 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 2 1.3 Dimensions / Maße in mm
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BC847W-AU Pan Jit
Pan Jit
  (BC846AW-AU - BC850CW-AU) NPN GENERAL PURPOSE TRANSISTORS

BC846AW-AU ~ BC850CW-AU NPN GENERAL PURPOSE TRANSISTORS VOLTAGE FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • • • • • Collector current IC = 100mA Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in comply with EU RoHS 2011/65/EU directives Green molding compound as per IEC61249 Std. . (Halogen Free) 30/45/65 Volts POWER 250 mWatts MECHANICAL DATA • Case: SOT-323, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Ap
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BC847W-AU Pan Jit
Pan Jit
  (BC846AW-AU - BC850CW-AU) NPN GENERAL PURPOSE TRANSISTORS

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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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