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BC807 даташит

Функция этой детали – «PNP SilICon Af Transistors».



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Номер в каталоге Производители Описание PDF
BC807 Zetex Semiconductors
Zetex Semiconductors
  PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ BC807 E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Peak Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB I BM P tot T j :T stg VALUE -50 -45 -5 -1 -
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BC807 Unisonic Technologies
Unisonic Technologies
  PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818  ORDERING INFORMATION Ordering Number Package Note: BC807G-xx-AE3-R BC807G-xx-AL3-R BC808G-xx-AE3-R BC808G-xx-AL3-R Pin Assignment: C: Collector B: Base SOT-23 SOT-323 SOT-23 SOT-323 E: Emitter Pin Assignment 123 EBC EBC EBC EBC Packing Tape Reel Tape Reel Tape Reel Tape Reel  MARKING 807-16 808-16
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BC807 TRSYS
TRSYS
  PNP SURFACE MOUNT TRANSISTOR

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BC807 Siemens Semiconductor Group
Siemens Semiconductor Group
  PNP Silicon AF Transistors (For general AF applications High collector current High current gain)

PNP Silicon AF Transistors BC 807 BC 808 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 (NPN) Type BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs Ordering Code Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semiconductor Gro
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BC807 SEMTECH
SEMTECH
  PNP Silicon Epitaxial Planar Transistors

BC807 / BC808 PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Thermal Resistance Junction to Ambient Air Junction Temperatu
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BC807 Philips
Philips
  PNP general purpose transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC807 PNP general purpose transistor Product specification Supersedes data of 1997 Feb 28 1999 Apr 08 Philips Semiconductors PNP general purpose transistor Product specification BC807 FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC817. MARKIN
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BC807 NXP Semiconductors
NXP Semiconductors
  PNP general purpose transistor

BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1. Product overview Type number Package NXP BC807 SOT23 BC807W SOT323 BC327[1] SOT54 (TO-92) JEITA SC-70 SC-43A [1] Also available in SOT54A and SOT54 variant packages (see Section 2). NPN complement BC817 BC817W BC337 1.2 Features „ High current „ Low voltage 1.3 Applications „ General-purpose switching
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BC807 Leshan Radio Company
Leshan Radio Company
  General Purpose Transistors(PNP Silicon)

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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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