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Datasheet BC327 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BC327 | PNP General Purpose Transistor PNP General Purpose Transistor
P b Lead(Pb)-Free
BC327/BC328
COLLECTOR 1
2 BASE
3 EMITTER
TO-92
1 2 3
Maximum Ratings(TA=25°C unless otherwise noted)
Rating
Symbol
BC327
BC328
Collector-Base voltage
VCBO
-50
-30
Collector-Emitter voltage
VCEO
-45
-25
Emitter-Base voltage
VEBO
-5. | WEITRON | transistor |
2 | BC327 | PNP General PurposeTransistor Elektronische Bauelemente
BC327/BC328
PNP General PurposeTransistor
FEATURES
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
TO-92
Power dissipation
PCM : 0.625 W Tamb=25 Collector current
ICM : -0.8 Collector-base voltage
A
V(BR)CBO : BC327 -50 V
BC328 -30
Operating | SeCoS | transistor |
3 | BC327 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA). For Complementary with NPN type BC337.
BC327
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Coll | KEC | transistor |
4 | BC327 | Amplifier Transistors(PNP) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC327/D
Amplifier Transistors
PNP Silicon
COLLECTOR 1
BC327,-16,-25 BC328,-16,-25
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
Symbol BC327 BC328 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
C | Motorola Inc | transistor |
5 | BC327 | Amplifier Transistors (PNP Silicon) BC327, BC327-16, BC327-25, BC327-40
Amplifier Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C
Derate above | ON Semiconductor | transistor |
BC3 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BC3.5 | Diode, Rectifier American Microsemiconductor diode | | |
2 | BC300 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302 TO-39 Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO CDIL transistor | | |
3 | BC300 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics amplifier | | |
4 | BC301 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302 TO-39 Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO CDIL transistor | | |
5 | BC301 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics amplifier | | |
6 | BC302 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302 TO-39 Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO CDIL transistor | | |
7 | BC302 | Bipolar NPN Device BC302
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 45V
5.08 (0.200) typ.
IC Seme LAB data | |
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Número de pieza | Descripción | Fabricantes | |
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