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BC237 даташитФункция этой детали – «NPN Epitaxial SilICon Transistor». |
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Номер в каталоге | Производители | Описание | |
BC237 | SEMTECH |
NPN Silicon Epitaxial Planar Transistor BC237...BC239
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications
The transistor is subdivided into three groups, A, B, and C, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range
1. Collector 2. Base 3. Emitter TO-92 Plastic Package
Symbol BC237 BC238 BC239
VCBO VCEO VEBO
IC Ptot
50 45 6
30 30 25 25
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BC237 | Philipss |
NPN general purpose transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC237; BC237B NPN general purpose transistors
Product specification Supersedes data of 1997 Mar 06 File under Discrete Semiconductors, SC04 1997 Sep 04
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC307; BC307B. PINNING |
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BC237 | ON |
Amplifier Transistors(NPN Silicon)
BC237, BC237B, BC237C, BC239C Amplifier Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 1 2 BASE Symbol VCEO BC237 BC239 Collector −Emitter Voltage BC237 BC239 Collector −Emitter Voltage BC237 BC239 Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Temperature Range IC PD PD TJ, Tstg VEBO 6.0 5.0 100 350 2.8 1.0 8.0 −55 to +150 mAdc mW mW/°C W mW/°C °C |
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BC237 | Motorola Semiconductors |
Amplifier Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document by BC237/D
NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC237,A,B,C BC238B,C BC239,C
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg BC 237 45 50 6. |
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BC237 | Micro Electronics |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
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BC237 | KEC |
EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION.
FEATURES High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). For Complementary With PNP type BC307/308/309.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
BC237
Collector-Base Voltage
BC238
BC239
BC237
Collector-Emitter Voltage
BC238
BC239
BC237
Emitter-Base Voltage
BC238
BC239
BC237
Collector Current
BC238
BC239
BC237
Emitter Current
BC238
BC239
Collector Power Dis |
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BC237 | Fairchild |
NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• LOW NOISE: BC239 TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25° C)
Characteristic Collector-Emitter Voltage : BC237 : BC238/239 Collector-Emitter Voltage : BC237 : BC238/239 Emitter-Base Voltage : BC237 : BC238/239 Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCES 50 30 VCEO 45 25 VEBO 6 5 100 500 150 -55 ~ 150 V V mA mW °C °C 1. Collector 2. Base 3. Emitter V V Rating Unit V V
IC PC TJ |
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BC237 | CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CB E
BC237,238, A,B,C BC239, B,C
TO-92 Plastic Package
For Lead Free Parts, Device Part # will be Prefixed with "T"
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Emitter Voltage Emitter Base Voltage
VCES VEBO
Collector Current Continuous
IC
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Power Dissipa |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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