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BC237 даташит

Функция этой детали – «NPN Epitaxial SilICon Transistor».



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Номер в каталоге Производители Описание PDF
BC237 SEMTECH
SEMTECH
  NPN Silicon Epitaxial Planar Transistor

BC237...BC239 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Symbol BC237 BC238 BC239 VCBO VCEO VEBO IC Ptot 50 45 6 30 30 25 25
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BC237 Philipss
Philipss
  NPN general purpose transistors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC237; BC237B NPN general purpose transistors Product specification Supersedes data of 1997 Mar 06 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC307; BC307B. PINNING
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BC237 ON
ON
  Amplifier Transistors(NPN Silicon)

BC237, BC237B, BC237C, BC239C Amplifier Transistors NPN Silicon Features http://onsemi.com COLLECTOR 1 2 BASE Symbol VCEO BC237 BC239 Collector −Emitter Voltage BC237 BC239 Collector −Emitter Voltage BC237 BC239 Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Temperature Range IC PD PD TJ, Tstg VEBO 6.0 5.0 100 350 2.8 1.0 8.0 −55 to +150 mAdc mW mW/°C W mW/°C °C
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BC237 Motorola Semiconductors
Motorola Semiconductors
  Amplifier Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC237/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC237,A,B,C BC238B,C BC239,C MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg BC 237 45 50 6.
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BC237 Micro Electronics
Micro Electronics
  NPN SILICON PLANAR EPITAXIAL TRANSISTOR

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BC237 KEC
KEC
  EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). For Complementary With PNP type BC307/308/309. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC BC237 Collector-Base Voltage BC238 BC239 BC237 Collector-Emitter Voltage BC238 BC239 BC237 Emitter-Base Voltage BC238 BC239 BC237 Collector Current BC238 BC239 BC237 Emitter Current BC238 BC239 Collector Power Dis
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BC237 Fairchild
Fairchild
  NPN EPITAXIAL SILICON TRANSISTOR

BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Emitter Voltage : BC237 : BC238/239 Collector-Emitter Voltage : BC237 : BC238/239 Emitter-Base Voltage : BC237 : BC238/239 Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCES 50 30 VCEO 45 25 VEBO 6 5 100 500 150 -55 ~ 150 V V mA mW °C °C 1. Collector 2. Base 3. Emitter V V Rating Unit V V IC PC TJ
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BC237 CDIL
CDIL
  NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CB E BC237,238, A,B,C BC239, B,C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipa
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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