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BAV23 даташитФункция этой детали – «Dual High-voltage Switching Diodes». |
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Номер в каталоге | Производители | Описание | |
BAV23 | SURGE |
Silicon Epitaxial Planar Diodes |
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BAV23 | Philips Semiconductors |
General purpose double diode DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D070
BAV23 General purpose double diode
Product specification Supersedes data of April 1996
1996 Sep 17
Philips Semiconductors
General purpose double diode
Product specification
BAV23
FEATURES
• Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage:
max. 200 V • Repetitive peak reverse voltage:
max. 250 V • Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
• General purpose where high b |
|
BAV23 | NXP Semiconductors |
Dual high-voltage switching diodes BAV23 series
Dual high-voltage switching diodes
Rev. 07 — 19 March 2010
Product data sheet
1. Product profile
1.1 General description
Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number
Package
NXP
BAV23A
SOT23
BAV23C
SOT23
BAV23S
SOT23
BAV23
SOT143B
JEDEC TO-236AB TO-236AB TO-236AB -
Configuration
dual common anode dual common cathode dual series dual isolated
1.2 Features and benefits
High switching speed |
|
BAV23 | MCC |
Small Signal Diode MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
BAV23/A/C/S
Features
• Fast Switching Speed • Operating and storage junction temperature range -65OC To 150OC • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Maximum Ratings
Symbol
Parameter
VBR Reverse Breakdown Vlotage @ IR=100 |
|
BAV23 | CYStech Electronics |
High voltage switching (double) diodes CYStech Electronics Corp.
High voltage switching (double) diodes
BAV23/A/C/SN3
Spec. No. : C335N3 Issued Date : 2016.05.09 Revised Date : Page No. : 1/7
Description
High voltage switching diodes encapsulated in a SOT-23 small plastic SMD package. Single diodes and double diodes with different pinning are available.
Features
•Fast switching speed •Low forward voltage drop •Pb-free lead plating and halogen-free package
Mechanical Data
•Case : SOT-23, molded plastic •Terminals : Solderable per MIL-STD-202 Met |
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BAV23A | WILLAS |
SOT-23 Plastic-Encapsulate Diodes WILLAS
1.0ASSUORFTA-C2E3MPOUlNaTsStCicHO-ETTnKcY aBApRsRuIElRaRtEeCTDIFiIoERdSe-2s0V- 200V
SOD-123+ PACKAGE
FM120-M+
THRU
BAV2F3AM/C12/S00-M+
Pb Free Product
SCHFOeTaTtKuYreBsARRIER DIODE
• Batch process design, excellent power dissipation offers FEATbUetRteEr rSeverse leakage current and thermal resistance. z F• LaoopswttimSpirwzoefiitblceohsaiunrdrgfaspcSeapcmeeoe. udnted application in order to z H• Ligohw pCoownedr ulocstsa, nhcigeh efficiency. z F•• HHoriiggGhh sceuunrregreernactlacPpaapubaripbliiotlyit |
|
BAV23A | SeCoS |
Plastic Encapsulated Schottky Diode Elektronische Bauelemente
BAV23 Series
BAV23A / BAV23C / BAV23S Plastic Encapsulated Schottky Diode
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
z Fast Switching Speed z For General Purpose Switching Applications z High Conductance
SOT-23
A
L
3
Top View
CB
12
KE
1
3 2
F
REF.
A B C D E F
D
GH
Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15
1.80 2.00
0.30 0.50
REF.
G H J K L
J
Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177
0.6 REF. 0.89 1.02
BAV23A, M |
|
BAV23A | NXP Semiconductors |
Dual high-voltage switching diodes BAV23 series
Dual high-voltage switching diodes
Rev. 07 — 19 March 2010
Product data sheet
1. Product profile
1.1 General description
Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number
Package
NXP
BAV23A
SOT23
BAV23C
SOT23
BAV23S
SOT23
BAV23
SOT143B
JEDEC TO-236AB TO-236AB TO-236AB -
Configuration
dual common anode dual common cathode dual series dual isolated
1.2 Features and benefits
High switching speed |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |