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B647A даташитФункция этой детали – «PDF». |
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Номер в каталоге | Производители | Описание | |
B642 | Panasonic Semiconductor |
PNP Transistor - 2SB642 Transistor
2SB642
Silicon PNP epitaxial planer type
For low-power general amplification
s Features
q High foward current transfer ratio hFE. q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO |
|
B643 | Panasonic Semiconductor |
PNP Transistor - 2SB643 Transistor
2SB643, 2SB644
Silicon PNP epitaxial planer type
For low-power general amplification Complementary to 2SD638 and 2SD639
s Features
q M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to 2SB643 base voltage 2SB644 Collector to 2SB643 emitter voltage 2SB644 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temp |
|
B644 | Panasonic Semiconductor |
PNP Transistor - 2SB644 Transistor
2SB643, 2SB644
Silicon PNP epitaxial planer type
For low-power general amplification Complementary to 2SD638 and 2SD639
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
Unit: mm
s Features
q
1.5 R0.9 R0.9
1.0±0.1
Parameter Collector to base voltage Collector to
0.85
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –30 –60 –25 –50 –7 –1 – 0.5 600 150 –55 ~ +150
Unit
0.55±0.1
2SB644 2SB643
V
3 2 1
emitter voltage 2SB644 Emitter to base voltage Peak colle |
|
B645 | SavantIC |
PNP Transistor - 2SB645 SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
DESCRIPTION ·With TO-3 package ·High power dissipation
APPLICATIONS ·For power switching and general
purpose applications
PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector
Product Specification
2SB645
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO IC
Emitter-base voltage Collector current
IB Base current
PC Collector |
|
B647 | Hitachi Semiconductor |
PNP Transistor - 2SB647 2SB647, 2SB647A
Silicon PNP Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SD667/A
Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1
2SB647, 2SB647A
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SB647 –120 –80 –5 –1 |
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B649 | Unisonic Technologies |
PNP Transistor - 2SB649
UNISONIC TECHNOLOGIES CO., LTD
2SB649/A
PNP SILICON TRANSISTOR
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
1 SOT-89
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC 2SB669/A
1
TO-126
1 TO-126C
1 TO-92
*Pb-free plating product number: 2SB649L/2SB649AL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SB649-x-AB3-R
2SB649L-x-AB3-R
2SB649-x-T6C-K
2SB649L-x-T6C-K
2SB649-x-T60-K
2SB649L-x-T60-K
2SB649-x-T92-B
2SB649L-x-T92-B
2SB649-x-T92-K
2SB649L-x-T9 |
|
B649 | JCST |
PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SB649/2SB649A TRANSISTOR (PNP)
TO- 126
FEATURES Low Frequency Power Amplifier Complementary Pair
with 2SD669/A
1. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
2. COLLECTOR
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-180
V
3. BASE
VCEO
Collector-Emitter Voltage
2SB649
-120
V
2SB649A
-160
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current –Continuous
-1.5
A
PC Collector Powe |
|
B649A | Unisonic Technologies |
PNP Transistor - 2SB649A
UNISONIC TECHNOLOGIES CO., LTD
PNP SILICON TRANSISTOR
1
2SB649/A
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC 2SB669/A
SOT-89
1
TO-126
1
TO-126C
1
TO-92
*Pb-free plating product number: 2SB649L/2SB649AL
ORDERING INFORMATION
Order Number Normal Lead Free Plating 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T6C-K 2SB649L-x-T6C-K 2SB649-x-T60-K 2SB649L-x-T60-K 2SB649-x-T92-B 2SB649L-x-T92-B 2SB649-x-T92-K 2SB649L-x-T92-K 2SB649A- |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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