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B130Q даташитФункция этой детали – «1.0a Surface Mount Schottky Barrier Rectifier». |
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Номер в каталоге | Производители | Описание | |
B130Q | Diodes |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Green B120Q/BQ - B160Q/BQ
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Product Summary
B120Q/BQ-B140Q/BQ
VRRM (V) 20/30/40
IO (A) 1.0
B150Q/BQ, B160Q/BQ
VRRM (V) 50/60
IO (A) 1.0
VF Max (V) TA = +25°C
0.5
IR Max (mA) TA = +25°C
0.5
VF Max (V) TA = +25°C
0.7
IR Max (mA) TA = +25°C
0.5
Features and Benefits
Guard Ring Die Construction for Transient Protection Ideally Suited for Automated Assembly Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low-Voltage, |
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Номер в каталоге | Производители | Описание | |
BTS4130QGA | Infineon Technologies |
Smart High-Side Power Switch Data Sheet, Rev. 1.0, March 2008
BTS4130QGA
Smart High-Side Power Switch
Automotive Power
1
2
3 3.1 3.2 3.3
4 4.1 4.2 4.3
5 5.1 5.2 5.3 5.3.1 5.4
6 6.1 6.2 6.3 6.4 6.5 6.5.1 6.6
7 7.1 7.2 7.2.1 7.2.2 7.3
8 8.1 8.2
9 9.1
10
11
Overview 3
Block Diagram 5
Pin Configuration 6 Pin A |
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PBSS5130QA | NXP Semiconductors |
PNP low VCEsat (BISS) transistor DF N1 01
PBSS5130QA
28 August 2013
0D -3
30 V, 1 A PNP low VCEsat (BISS) transistor
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic pac |
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RP130Q181D-TR-FE | RICOH |
LOW NOISE 150mA LDO REGULATOR RP130x SERIES
LOW NOISE 150mA LDO REGULATOR
NO.EA-173-131031
OUTLINE
The RP130x Series are CMOS-based positive voltage regulator ICs with high ripple rejection, low dropout voltage, high output voltage accuracy and extremely low supply current. Each of these ICs consists of a |
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RP130Q331D-TR-FE | RICOH |
LOW NOISE 150mA LDO REGULATOR RP130x SERIES
LOW NOISE 150mA LDO REGULATOR
NO.EA-173-131031
OUTLINE
The RP130x Series are CMOS-based positive voltage regulator ICs with high ripple rejection, low dropout voltage, high output voltage accuracy and extremely low supply current. Each of these ICs consists of a |
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RU1H130Q | Ruichips |
N-Channel Advanced Power MOSFET RU1H130Q
N-Channel Advanced Power MOSFET
Features
•100V/130A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• High Efficiency Synchro |
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1.5CE130A | Central Semiconductor |
UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1.5CE6.8A THRU 1.5CE440A 1.5CE6.8CA THRU 1.5CE440CA
UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1500 WATTS, 6.8 THRU 440 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 1.5CE6.8A (UniDirectional) and 1.5CE6.8CA (Bi- |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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