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Datasheet APM2313 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | APM2313 | P-Channel Enhancement Mode MOSFET APM2313
P-Channel Enhancement Mode MOSFET
Features
• • • •
-20V/-1.8A , RDS(ON)=108mΩ(typ.) @ VGS=-4.5V RDS(ON)=135mΩ(typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package
Pin Description
D
G
S
Top View of SOT-23
Applications
� |
 Etc |
 |
| 3 | APM2313 | P-Channel Enhancement Mode MOSFET APM2313
P-Channel Enhancement Mode MOSFET
Features
Pin Description
•
-20V/-1.8A
,
RDS(ON)=108mΩ(typ.)
@
V =-4.5V GS
RDS(ON)=135mΩ(typ.)
@
V =-2.5V GS
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• SOT-23 Package
Applications
D
GS
Top Vie |
 Anpec Electronics |
|
| 2 | APM2313A | P-Channel Enhancement Mode MOSFET APM2313A
P-Channel Enhancement Mode MOSFET
Features
Pin Description
• -20V/-2.5A ,
RDS(ON)=108mΩ (typ.) @ VGS=-4.5V
RDS(ON)=135mΩ
(typ.)
@
V =-2.5V GS
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)
Applications
Top View of SOT-23 |
Etc |
|
| 1 | APM2313A | P-Channel Enhancement Mode MOSFET APM2313A
P-Channel Enhancement Mode MOSFET
Features
Pin Description
• -20V/-2.5A ,
RDS(ON)=108mΩ (typ.) @ VGS=-4.5V
RDS(ON)=135mΩ
(typ.)
@
V =-2.5V GS
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)
Applications
Top View of SOT-23 |
Anpec Electronics |
|
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