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AP9962GH даташит

Функция этой детали – «Power Mosfet ( Transistor )».



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Номер в каталоге Производители Описание PDF
AP9962GH Advanced Power Electronics
Advanced Power Electronics
  Power MOSFET ( Transistor )

AP9962GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 40V 20mΩ 32A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applicati
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AP9962GH-HF Advanced Power Electronics
Advanced Power Electronics
  N-channel Enhancement-mode Power MOSFET

Advanced Power Electronics Corp. AP9962GH/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement D ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S Description AP9962 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO
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AP9962GH-HF-3 Advanced Power Electronics
Advanced Power Electronics
  N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP9962GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Low On-resistance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 40V 20mΩ 32A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252 (H) The AP9962GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount app
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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