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AP9563GH даташитФункция этой детали – «P-channel Enhancement Mode Power Mosfet». |
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Номер в каталоге | Производители | Описание | |
AP9563GH | Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9563GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-40V 40mΩ -26A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9563GJ) is available for low-profile applications.
G D S G D |
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AP9563GH | Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9563GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-40V 40mΩ -26A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9563GJ) is available for low-profile applications.
G D S G D S
TO-252(H)
TO-25 |
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AP9563GH-HF | Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9563GH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-40V 40mΩ -26A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G D S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial surface |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |