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AP02N60J-H даташитФункция этой детали – «N-channel Enhancement Mode Power Mosfet». |
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Номер в каталоге | Производители | Описание | |
AP02N60J-H | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP02N60H/J-H
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement
G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
700V 8.8Ω 1.4A
Description
G D
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J-H) is available for low-profile applications.
G D S
S
TO-252(H)
TO-251(J)
Abso |
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AP02N60J-H-HF | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP02N60H/J-H-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant
G
D S
Description
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J-H-HF) is available for low-profile applications.
BVDSS RDS(ON) ID
700V 8.8Ω 1.4A
G D S TO-252(H)
G DS
TO-251(J)
Absol |
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AP02N60J-H-HF-3 | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP02N60H/J-H-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Speed RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
700V 8.8Ω 1.4A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S
D (tab)
TO-252 (H)
The AP02N60H-H-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial sur |
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AP02N60J-HF | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP02N60H/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ RoHS Compliant
G
D S
BVDSS RDS(ON) ID
600V 8Ω 1.6A
Description
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J) is available for low-profile applications.
G D S TO-252(H)
G DS
TO-251(J)
Absolute Maximum Ratings |
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AP02N60J-HF-3 | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP02N60H/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Speed RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
600V 8Ω 1.6A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S
D (tab)
TO-252 (H)
The AP02N60H-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface m |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |