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AP02N60J-H даташит

Функция этой детали – «N-channel Enhancement Mode Power Mosfet».



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Номер в каталоге Производители Описание PDF
AP02N60J-H Advanced Power Electronics
Advanced Power Electronics
  N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 700V 8.8Ω 1.4A Description G D The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J-H) is available for low-profile applications. G D S S TO-252(H) TO-251(J) Abso
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AP02N60J-H-HF Advanced Power Electronics
Advanced Power Electronics
  N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP02N60H/J-H-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant G D S Description The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J-H-HF) is available for low-profile applications. BVDSS RDS(ON) ID 700V 8.8Ω 1.4A G D S TO-252(H) G DS TO-251(J) Absol
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AP02N60J-H-HF-3 Advanced Power Electronics
Advanced Power Electronics
  N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP02N60H/J-H-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Speed RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 700V 8.8Ω 1.4A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S D (tab) TO-252 (H) The AP02N60H-H-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial sur
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AP02N60J-HF Advanced Power Electronics
Advanced Power Electronics
  N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP02N60H/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ RoHS Compliant G D S BVDSS RDS(ON) ID 600V 8Ω 1.6A Description The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J) is available for low-profile applications. G D S TO-252(H) G DS TO-251(J) Absolute Maximum Ratings
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AP02N60J-HF-3 Advanced Power Electronics
Advanced Power Electronics
  N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP02N60H/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Speed RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 600V 8Ω 1.6A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S D (tab) TO-252 (H) The AP02N60H-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface m
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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