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AM29F800BB-150 даташитФункция этой детали – «8 Megabit (1 M X 8-bit/512 K X». |
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Номер в каталоге | Производители | Описание | |
AM29F800 | AMD |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory-Die Revision 1 SUPPLEMENT
Am29F800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
s Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements s Manufactured on 0.35 µm process technology — Compatible with 0.5 µm Am29F800 device s High performance — 90 or 120 ns access time s Low power consumption (typical values at 5 MHz) — 1 µA standby mode current |
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AM29F800B | AMD |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory PRELIMINARY
Am29F800B
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements s Manufactured on 0.35 µm process technology — Compatible with 0.5 µm Am29F800 device s High performance — Access times as fast as 55 ns s Low power consumption (typical values at 5 MHz) — 1 µA standby mode current — 20 mA read current (by |
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AM29F800B | AMD |
Sector Erase Flash Memory
PRELIMINARY
Am29F800T/Am29F800B
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s 5.0 V ± 10% for read and write operations — Minimizes system level power requirements s Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection s Package options — 44-pin SO — 48-pin TSOP s Minimum 100,000 write/erase cycles guaranteed s High performance � |
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AM29F800B-1 | AMD |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory-Die Revision 1 SUPPLEMENT
Am29F800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
s Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements s Manufactured on 0.35 µm process technology — Compatible with 0.5 µm Am29F800 device s High performance — 90 or 120 ns access time s Low power consumption (typical values at 5 MHz) — 1 µA standby mode current |
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AM29F800T | AMD |
Sector Erase Flash Memory
PRELIMINARY
Am29F800T/Am29F800B
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s 5.0 V ± 10% for read and write operations — Minimizes system level power requirements s Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection s Package options — 44-pin SO — 48-pin TSOP s Minimum 100,000 write/erase cycles guaranteed s High performance � |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |