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AF4871A даташит

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Номер в каталоге Производители Описание PDF
AF431 AUK corp
AUK corp
  Programmable Voltage Reference (Programmable output voltage to 20 volts)

Semiconductor AF431xSF Programmable Voltage Reference Features • • • • • • Programmable output voltage to 20 volts Sink current capability of 1.0mA to 100mA Low dynamic impedance 0.15Ω typical Temperature compensated for operation over full rated operating temperature Equivalent full-range temperature coefficient of 50ppm/°C (Typical) Low output Noise voltage Ordering Information Type NO. AF431xSF Marking □41 □: Grade => B : ±0.5%, A : ±1.0% Package Code SOT-23F Outline Dimensions Symbol 2.4±0.
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AF431XSF AUK corp
AUK corp
  Programmable Voltage Reference (Programmable output voltage to 20 volts)

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AF4407P Anachip
Anachip
  P-Channel 30-V (D-S) MOSFET

AF4407P P-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (±25) for battery pack applications General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applicatio
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AF4409P Anachip
Anachip
  P-Channel 30-V (D-S) MOSFET

AF4409P P-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable
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AF4410N Anachip
Anachip
  N-Channel Enhancement Mode Power MOSFET

AF4410N N-Channel Enhancement Mode Power MOSFET „ Features - Simple Drive Requirement - Low On-resistance - Fast Switching „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. ID (A) 10 „ Product Summary
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AF4415P Anachip
Anachip
  P-Channel 20-V (D-S) MOSFET

AF4415P P-Channel 20-V (D-S) MOSFET Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable
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AF4502C Anachip
Anachip
  P & N-Channel 30-V (D-S) MOSFET

AF4502C P & N-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter applications General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications
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AF4512C Anachip
Anachip
  P & N-Channel 30-V (D-S) MOSFET

AF4512C P & N-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter applications General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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