|
ADG1434 даташитФункция этой детали – «(adg1433 / Adg1434) Triple/quad Spdt». |
Показать результаты поиска |
| Номер в каталоге | Производители | Описание | |
| ADG1434 |  Analog Devices |
(ADG1433 / ADG1434) Triple/Quad SPDT
4 Ω RON, Triple/Quad SPDT ±15 V/+12 V/±5 V iCMOS® Switches ADG1433/ADG1434
FEATURES
4.7 Ω maximum on resistance @ 25°C 0.5 Ω on resistance flatness 33 V supply maximum ratings Fully specified at ±15 V/+12 V/±5 V 3 V logic compatible inputs Rail-to-rail operation Break-before-make switching action 16-/20-lead TSSOP and 4 mm × 4 mm LFCSP_VQ packages
FUNCTIONAL BLOCK DIAGRAMS
ADG1433
S1A D1 S1B S3B D3 S2B D2 S2A LOGIC S3A
APPLICATIONS
Relay replacement Audio and video routing Automatic test |
 |
Это результат поиска, начинающийся с "1434", "ADG1" |
| Номер в каталоге | Производители | Описание | |
| 2SA1434 |  Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor Ordering number:ENN1853A
PNP Epitaxial Planar Silicon Transistor
2SA1434
High hFE, Low-Frequency General-Purpose Amp Applications
Applications
· Low frequency general-purpose amplifiers, drivers, muting circuits.
Features
· Ultrasmall-sized package permitting 2SA1434-used set |
 |
| 2SA1434 |  Kexin |
Transistor SMD Type
Transistors IC
PNP Epitaxial Planar Silicon Transistor 2SA1434
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Features
Adoption of FBET process. High DC current gain (hFE=500 to 1200).
+0.1 2.4-0.1
Unit: mm
Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VE |
|
| 2SA1434 |  TY Semiconductor |
Transistor Product specification
2SA1434
Features
Adoption of FBET process. High DC current gain (hFE=500 to 1200).
+0.1 2.4-0.1
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V).
+0.1 1.3-0.1
1
+0.1 0.95-0.1 + |
|
| 2SB1434 |  Panasonic Semiconductor |
Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistors
2SB1434
Silicon PNP epitaxial planer type
Unit: mm
For low-frequency output amplification Complementary to 2SD2177 I Features
• Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping
6.9±0.1
1.05 2.5±0.1 ±0.05
(1.45) |
|
| 2SK1434 | Sanyo Semicon Device |
N-Channel Silicon MOSFET Ordering number:EN3572
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon MOSFET
2SK1434
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2056A
[2SK1434]
15.6 3.2 14.0
4.8 2.0
1.3 1.2 3.5 15.0 20.0
2.6
1. |
|
| 6EP1434-1SH01 |  Siemens |
SITOP Power Supplies SITOP Power Supplies
SITOP Power Single-Phase
Dimensions
L1N Input AC 120/230V SIEMENS 3.54 (90)
L+L+M+M Output DC 24V/1,3A
L1N Input AC 120/230V SIEMENS
L+L+M+M Output DC 24V/1,3A
3.54 (90)
LOGO 1 Power 1.3 x2 34
LOGO! Power 2,5 x2 34
2.80 (72)
2.0 |
|
[1]
Последние обновления
| Номер в каталоге | Производители | Описание | |
| 2N3904 |  Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
| NE555 |  ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
|
| DataSheet26.com | 2020 | Контакты |