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ACNW3130 даташитФункция этой детали – «Very High Cmr 2.5 Amp Output Current Igbt». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
ACNW3130 | AVAGO |
Very High CMR 2.5 Amp Output Current IGBT Gate Driver Optocoupler ACPL-3130/J313, ACNW3130 Very High CMR 2.5 Amp Output Current IGBT Gate Driver Optocoupler
Data Sheet
Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product
Description
The ACPL-3130 contains a GaAsP LED while the ACPLJ313 and the ANCW3130 contain an AlGaAs LED. The LED is optically coupled to an integrated circuit with a power output stage. These optocouplers are ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. |
Это результат поиска, начинающийся с "3130", "ACNW3" |
Номер в каталоге | Производители | Описание | |
2SC3130 | Panasonic Semiconductor |
Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)
Transistor
2SC3130
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
Unit: mm
2.8 –0.3
+0.2
s Features
q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
0.95
q
High transition frequency fT. Small collector output capa |
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2SC3130 | Inchange Semiconductor |
Silicon NPN RF Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3130
DESCRIPTION ·High Current-Gain Bandwidth Product ·Small Output Capacitance
APPLICATIONS ·Designed for high-frequency amplification, oscillation, mixing
applications.
ABSOLUTE MAXIMUM |
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2SC3130 | BLUE ROCKET ELECTRONICS |
Silicon NPN transistor 2SC3130
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
特征频率 fT 高,共基极输出电容小和反向传输出电容小。 High fT, small Cob and s |
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2SC3130 | Kexin |
NPN Transistors SMD Type
Transistors
NPN Transistors 2SC3130
■ Features
● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=10V
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1 +0.05
-0.01
+0.1 |
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2SK3130 | Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3130
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3130
Switching Regulator Applications
Unit: mm • • • • • • Reverse-recovery time: trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.) |
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3130 | Allegro MicroSystems |
HALL-EFFECT SWITCHES |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |