A1699 PDF Datasheet

Cascadable Amplifier 10 to 1200 MHz Features • • • • LOW NOISE: 3.5 dB (TYP.) HIGH EFFICIENCY: 15 mA (TYP.) @ +5 Volts GOOD DYNAMIC RANGE: 102.5 dB (TYP.) in 1 MHz BW LOW VSWR: <1.5:1 (TYP.) A16-2/ SMA16-2 V2 Product Image Description The A16-2 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accu

Ordering number:EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications · High-voltage switching, AF power amplifier, 100W output predrivers. Package Dimensions unit:mm 2041 [2SA1606/2SC4159] Features · Micaless package facilitating mounting. ( ) : 2SA1606 E : Emitter C : Collector B : Base SAN

Ordering number:EN2479A Features · Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Package Dimensions unit:mm 2018A [2SA1607/2SC4168] ( ) : 2SA1607 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-

SMD Type Features High fT: fT=400MHz. PNP Silicon Epitaxia 2SA1608 TransistIoCrs Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -60 -40 -5 -500 150 150 -55 to +150 Unit V V V mA mW