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Номер в каталоге Производители Описание PDF
9997GH-HF Advanced Power Electronics
Advanced Power Electronics
  AP9997GH-HF

AP9997GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 120mΩ 11A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface m
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Номер в каталоге Производители Описание PDF
AP9997GH-HF Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9997GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 120mΩ 11A S Descript
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AP9997GH-HF-3 Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP9997GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristic Lower Gate Charge RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 100V 120mΩ 11A Description Advanced Power MOSFETs from AP
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AP9997AGH-HF Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9997AGH-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 120V 185mΩ 8.8A S Description Advanced P
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AP9997AGH-HF-3 Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP9997AGH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 120V 185mΩ 8.8A Description Advanced Power MOSFETs from APE
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AP9997BGH-HF Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9997BGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 145mΩ 9.3A
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AP9997BGJ-HF Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9997BGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 145mΩ 9.3A
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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