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9997GH даташитФункция этой детали – «PDF». |
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Номер в каталоге | Производители | Описание | |
9997GH-HF | Advanced Power Electronics |
AP9997GH-HF AP9997GH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
100V 120mΩ 11A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface m |
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Номер в каталоге | Производители | Описание | |
AP9997GH-HF | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9997GH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
100V 120mΩ 11A
S
Descript |
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AP9997GH-HF-3 | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP9997GH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fast Switching Characteristic Lower Gate Charge RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
100V 120mΩ 11A
Description
Advanced Power MOSFETs from AP |
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AP9997AGH-HF | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9997AGH-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
120V 185mΩ 8.8A
S
Description
Advanced P |
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AP9997AGH-HF-3 | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP9997AGH-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
120V 185mΩ 8.8A
Description
Advanced Power MOSFETs from APE |
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AP9997BGH-HF | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9997BGH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
100V 145mΩ 9.3A
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AP9997BGJ-HF | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9997BGH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
100V 145mΩ 9.3A
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |