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9014M даташит электронных компонентов


9014M Datasheet ( Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 9014M  9014M Даташит - FOSHAN BLUE ROCKET SILICON NPN TRANSISTOR

9014M(3DG9014M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低电平、 低噪声的前置放大器。 /Purpose: L ow fr equency, lownoise p re-amplifier. 特点:PC 大,hFE 高且特性好,与 9015M(3CG9015M)互补。/Features: High P C and h FE, excellent hFE linearity, complementary pair with 9015M(3CG9015M). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 45 5.0 100 400 150 -55~150 V V V
FOSHAN BLUE ROCKET
FOSHAN BLUE ROCKET
PDF


9014 даташита ( переписка )

Номер в каталоге Описание Производители PDF
9014C  9014C Даташит - UTC NPN Silicon Transistor

9014M(3DG9014M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低电平、 低噪声的前置放大器。 /Purpose: L ow fr equency, lownoise p re-amplifier. 特点:PC 大,hFE 高且特性好,与 9015M(3CG9015M)互补。/Features: High P C and h FE, excellent hFE linearity, complementary pair with 9015M(3CG9015M). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 45 5.0 100 400 150 -55~150 V V V
UTC
UTC
PDF
9014  9014 Даташит - Wing Shing Computer Components NPN SILICON TRANSISTOR

9014M(3DG9014M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低电平、 低噪声的前置放大器。 /Purpose: L ow fr equency, lownoise p re-amplifier. 特点:PC 大,hFE 高且特性好,与 9015M(3CG9015M)互补。/Features: High P C and h FE, excellent hFE linearity, complementary pair with 9015M(3CG9015M). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 45 5.0 100 400 150 -55~150 V V V
Wing Shing Computer Components
Wing Shing Computer Components
PDF
9014M  9014M Даташит - FOSHAN BLUE ROCKET SILICON NPN TRANSISTOR

9014M(3DG9014M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低电平、 低噪声的前置放大器。 /Purpose: L ow fr equency, lownoise p re-amplifier. 特点:PC 大,hFE 高且特性好,与 9015M(3CG9015M)互补。/Features: High P C and h FE, excellent hFE linearity, complementary pair with 9015M(3CG9015M). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 45 5.0 100 400 150 -55~150 V V V
FOSHAN BLUE ROCKET
FOSHAN BLUE ROCKET
PDF
9014  9014 Даташит - Fairchild Quad Exclusive OR Gate

9014M(3DG9014M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低电平、 低噪声的前置放大器。 /Purpose: L ow fr equency, lownoise p re-amplifier. 特点:PC 大,hFE 高且特性好,与 9015M(3CG9015M)互补。/Features: High P C and h FE, excellent hFE linearity, complementary pair with 9015M(3CG9015M). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 45 5.0 100 400 150 -55~150 V V V
Fairchild
Fairchild
PDF
9014W  9014W Даташит - FOSHAN BLUE ROCKET Silicon NPN transistor

9014M(3DG9014M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低电平、 低噪声的前置放大器。 /Purpose: L ow fr equency, lownoise p re-amplifier. 特点:PC 大,hFE 高且特性好,与 9015M(3CG9015M)互补。/Features: High P C and h FE, excellent hFE linearity, complementary pair with 9015M(3CG9015M). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 45 5.0 100 400 150 -55~150 V V V
FOSHAN BLUE ROCKET
FOSHAN BLUE ROCKET
PDF
9014T  9014T Даташит - FOSHAN BLUE ROCKET Silicon NPN transistor

9014M(3DG9014M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低电平、 低噪声的前置放大器。 /Purpose: L ow fr equency, lownoise p re-amplifier. 特点:PC 大,hFE 高且特性好,与 9015M(3CG9015M)互补。/Features: High P C and h FE, excellent hFE linearity, complementary pair with 9015M(3CG9015M). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 45 5.0 100 400 150 -55~150 V V V
FOSHAN BLUE ROCKET
FOSHAN BLUE ROCKET
PDF



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